BUK581-100A Philips Semiconductors, BUK581-100A Datasheet

BUK581-100A

Manufacturer Part Number

BUK581-100A

Description

Manufacturer

Philips Semiconductors

Datasheets

1.BUK581-100A.pdf (8 pages)

2.BUK581-100A.pdf (8 pages)

Specifications of BUK581-100A

Case

TO-223

Date_code

08+

Current page: 1 of 8
Download datasheet (60Kb)

Philips Semiconductors

GENERAL DESCRIPTION

N-channel enhancement mode

logic level field-effect power

transistor in a plastic envelope

suitable for surface mount

applications.

The device is intended for use in

automotive and general purpose

switching applications.

PINNING - SOT223

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134)

THERMAL RESISTANCES

1 Temperature measured 1-3 mm from tab.

January 1998

PowerMOS transistor

Logic level FET

SYMBOL

SYMBOL PARAMETER

stg

DGR

tot

th j-b

th j-amb

gate

drain

source

drain (tab)

From junction to board

From junction to ambient

DESCRIPTION

PARAMETER

Drain-source voltage

Drain-gate voltage

Gate-source voltage

Drain current (DC)

Drain current (pulse peak value)

Total power dissipation

Storage temperature

Junction Temperature

QUICK REFERENCE DATA

PIN CONFIGURATION

SYMBOL

tot

DS(ON)

CONDITIONS

Mounted on any PCB

Mounted on PCB of Fig.17

CONDITIONS

amb

PARAMETER

Drain-source voltage

Drain current (DC)

Total power dissipation

Junction temperature

Drain-source on-state

resistance;

= 20 k

= 25 ˚C

= 100 ˚C

= 25 ˚C

= 5 V

MIN.

SYMBOL

- 55

MIN.

Product Specification

MAX.

TYP.

0.90

MAX.

100

150

0.9

1.5

BUK581-100A

100

150

0.9

0.6

3.6

1.5

MAX.

Rev 1.000

UNIT

˚C

UNIT

K/W

˚C

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