AT49SN6416T-70CI ATMEL Corporation, AT49SN6416T-70CI Datasheet

AT49SN6416T-70CI

Manufacturer Part Number

AT49SN6416T-70CI

Description

Manufacturer

ATMEL Corporation

Datasheets

1.AT49SN6416.pdf (42 pages)

2.AT49SN6416T-70CI.pdf (42 pages)

Specifications of AT49SN6416T-70CI

Case

QFN

Date_code

07+

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Meier Automation Equipment Co., Limited

Part Number:

AT49SN6416T-70CI

Manufacturer:

ATMEL/爱特梅尔

Quantity:

20 000

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Features

•

1. Description

The AT49SN6416(T) is a 1.8-volt 64-megabit Flash memory. The memory is divided

into multiple sectors and planes for erase operations. The device can be read or

reprogrammed off a single 1.8V power supply, making it ideally suited for In-System

programming. The device can be configured to operate in the asynchronous/page

read (default mode) or burst read mode. The burst read mode is used to achieve a

faster data rate than is possible in the asynchronous/page read mode. If the AVD and

the CLK signals are both tied to GND and the burst configuration register is configured

to perform asynchronous reads, the device will behave like a standard asynchronous

Flash memory. In the page mode, the AVD signal can be tied to GND or can be pulsed

low to latch the page address. In both cases the CLK can be tied to GND.

The AT49SN6416(T) is divided into four memory planes. A read operation can

occur in any of the three planes which is not being programmed or erased. This con-

current operation allows improved system performance by not requiring the system to

wait for a program or erase operation to complete before a read is performed. To fur-

ther increase the flexibility of the device, it contains an Erase Suspend and Program

Suspend feature. This feature will put the erase or program on hold for any amount of

1.65V - 1.95V Read/Write

High Performance

Sector Erase Architecture

Typical Sector Erase Time: 32K Word Sectors – 700 ms; 4K Word Sectors – 200 ms

Four Plane Organization, Permitting Concurrent Read in Any of the Three Planes not

Being Programmed/Erased

Suspend/Resume Feature for Erase and Program

Low-power Operation

VPP Pin for Write Protection and Accelerated Program Operations

RESET Input for Device Initialization

CBGA Package

Top or Bottom Boot Block Configuration Available

128-bit Protection Register

Common Flash Interface (CFI)

– Random Access Time – 70 ns

– Page Mode Read Time – 20 ns

– Synchronous Burst Frequency – 66 MHz

– Configurable Burst Operation

– Eight 4K Word Sectors with Individual Write Lockout

– One Hundred Twenty-seven 32K Word Main Sectors with Individual Write Lockout

– Memory Plane A: 25% of Memory Including Eight 4K Word Sectors

– Memory Plane B: 25% of Memory Consisting of 32K Word Sectors

– Memory Plane C: 25% of Memory Consisting of 32K Word Sectors

– Memory Plane D: 25% of Memory Consisting of 32K Word Sectors

– Supports Reading and Programming Data from Any Sector by Suspending Erase

– Supports Reading Any Word by Suspending Programming of Any Other Word

– 30 mA Active

– 35 µA Standby

of a Different Sector

64-megabit

(4M x 16)

Burst/Page

Mode 1.8-volt

Flash Memory

AT49SN6416

AT49SN6416T

3464C–FLASH–2/05

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