KRA760U KEC(Korea Electronics), KRA760U Datasheet
KRA760U
Manufacturer Part Number
KRA760U
Description
Manufacturer
KEC(Korea Electronics)
Datasheet
1.KRA760U.pdf
(4 pages)
Specifications of KRA760U
Date_code
06+
Packing_info
SOT-363
2002. 7. 9
SWITCHING APPLICATION.
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.
FEATURES
EQUIVALENT CIRCUIT
MAXIMUM RATING (Ta=25 )
ELECTRICAL CHARACTERISTICS (Ta=25 )
MARK SPEC
B
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Transition Frequency
Input Resistor
With Built-in Bias Resistors.
Simplify Circuit Design.
Reduce a Quantity of Parts and Manufacturing Process.
High Packing Density.
MARK
TYPE
CHARACTERISTIC
R1
CHARACTERISTIC
KRA760U
PK
C
E
Revision No : 3
SEMICONDUCTOR
KRA761U
KRA760U
KRA761U
KRA762U
KRA763U
KRA764U
SYMBOL
PM
V
V
V
TECHNICAL DATA
EQUIVALENT CIRCUIT (TOP VIEW)
I
CBO
CEO
EBO
C
KRA762U
RATING
-100
PN
-50
-50
Q1
-5
SYMBOL
6
1
V
I
I
CE(sat)
f
h
CBO
EBO
R
T
FE
1
*
5
2
UNIT
mA
KRA763U
V
V
V
PO
V
V
V
I
V
4
3
C
Q2
CB
EB
CE
CE
=-10mA, I
* Total Rating.
Collector Power Dissipation
Junction Temperature
Storage TemperatureRange
=-5V, I
=-5V, I
=-10V, I
=-50V, I
TEST CONDITION
CHARACTERISTIC
KRA764U
C
C
=0
=-1mA
B
E
C
=-0.5mA
=0
=-5mA
PP
EPITAXIAL PLANAR PNP TRANSISTOR
KRA760U~KRA764U
Marking
1. Q EMITTER
2. Q BASE
3. Q COLLECTOR
4. Q EMITTER
5. Q BASE
6. Q COLLECTOR
1
2
3
1
1
2
2
2
1
1
6
G
MIN.
B1
B
120
-
-
-
-
-
-
-
-
-
SYMBOL
5
2
P
T
US6
T
C
stg
6
5
4
j
*
4
3
TYP.
Type Name
-0.1
250
100
T
4.7
D
10
22
47
-
-
-
DIM
A1
B1
A
D
G
H
B
C
T
-55 150
RATING
MAX.
200
150
-100
-100
MILLIMETERS
-0.3
0.2+0.10/-0.05
0.15+0.1/-0.05
-
-
-
-
-
-
-
2.00 0.20
1.25 0.1
1.3 0.1
2.1 0.1
0.9 0.1
0-0.1
0.65
+ _
+ _
+ _
+ _
+ _
UNIT
UNIT
MHz
mW
k
nA
nA
V
1/4
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