M29W320DB-70N6E STMicroelectronics, M29W320DB-70N6E Datasheet
M29W320DB-70N6E
Manufacturer Part Number
M29W320DB-70N6E
Description
Manufacturer
STMicroelectronics
Datasheet
1.M29W320DT-70N6.pdf
(56 pages)
Specifications of M29W320DB-70N6E
Date_code
06+
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Feature summary
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June 2006
Supply Voltage
– V
– V
Access time: 70, 90ns
Programming time
– 10µs per Byte/Word typical
67 memory blocks
– 1 Boot Block (Top or Bottom Location)
– 2 Parameter and 64 Main Blocks
Program/Erase controller
– Embedded Byte/Word Program algorithms
Erase Suspend and Resume modes
– Read and Program another Block during
Unlock Bypass Program command
– Faster Production/Batch Programming
V
Temporary Block Unprotection mode
Common Flash Interface
– 64 bit Security code
Low power consumption
– Standby and Automatic Standby
100,000 Program/Erase cycles per block
Electronic Signature
– Manufacturer Code: 0020h
– Top Device Code M29W320DT: 22CAh
– Bottom Device Code M29W320DB: 22CBh
ECOPACK
PP
Read
Erase Suspend
/WP pin for Fast Program and Write Protect
CC
PP
=12V for Fast Program (optional)
= 2.7V to 3.6V for Program, Erase and
32 Mbit (4Mbx8 or 2Mbx16, Non-uniform Parameter Blocks,
®
packages available
Boot Block), 3V Supply Flash memory
Rev 9
TFBGA48 (ZE)
TSOP48 (N)
12 x 20mm
FBGA
M29W320DB
M29W320DT
www.st.com
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