PG05DBVSC KEC(Korea Electronics), PG05DBVSC Datasheet
PG05DBVSC
Manufacturer Part Number
PG05DBVSC
Description
Manufacturer
KEC(Korea Electronics)
Datasheet
1.PG05DBVSC.pdf
(2 pages)
Specifications of PG05DBVSC
Date_code
06+
Packing_info
SOT-723
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
PG05DBVSC-RTK/P
Manufacturer:
RENESAS
Quantity:
842
2007. 1. 10
Protection in Portable Electronics Applications.
FEATURES
APPLICATIONS
MAXIMUM RATING (Ta=25 )
ELECTRICAL CHARACTERISTICS (Ta=25 )
Peak Pulse Power (tp=8/20 s)
Junction Temperature
Storage Temperature
Reverse Stand-Off Voltage
Reverse Breakdown Voltage
Reverse Leakage Current
Junction Capacitance
50 Watts peak pulse power (tp=8/20 s)
Transient protection for data lines to
IEC 61000-4-2(ESD) 15kV(Air), 8kV(Contact)
IEC 61000-4-4(EFT) 40A(tp=5/50ns)
IEC 61000-4-5(Lightning) 5A(tp=8/20 s)
Bidirectional Type Pin Configuration Structure.
Small package for use in portable electronics.
Suitable replacement for Multi-Layer Varistors in ESD protection applications.
Protects one I/O or power line.
Low clamping voltage.
Low leakage current.
Cell phone handsets and accessories.
Microprocessor based equipment.
Personal digital assistants (PDA s)
Notebooks, desktops, & servers.
Portable instrumentation.
Pagers peripherals.
CHARACTERISTIC
CHARACTERISTIC
Revision No : 3
SEMICONDUCTOR
TECHNICAL DATA
SYMBOL
P
T
T
PK
stg
j
SYMBOL
V
V
RWM
C
I
BR
R
J
-55 150
-55 150
RATING
50
I
V
V
t
=1mA
RWM
R
=0V, f=1MHz
=5V
UNIT
W
TEST CONDITION
-
2
Marking
Protection in Portable Electronics
1. ANODE
2. ANODE
CATHODE MARK
2
A
B
PG05DBVSC
MIN.
5.8
TVS Diode for ESD
-
-
-
2
VSC
1
5B
TYP.
15
-
-
-
DIM
A
B
C
D
E
F
MAX.
1
7.8
25
5
5
MILLIMETERS
0.28 0.03
0.12 0.03
1.4 0.05
1.0 0.05
0.6 0.05
0.5 0.05
1
+ _
+ _
+ _
+ _
+ _
+ _
UNIT
pF
V
V
A
1/1
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