RN1106MFV TOSHIBA Semiconductor CORPORATION, RN1106MFV Datasheet

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RN1106MFV

Manufacturer Part Number
RN1106MFV
Description
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheets

Specifications of RN1106MFV

Date_code
06+
Packing_info
SOT-723

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Switching, Inverter Circuit, Interface Circuit and
Driver Circuit Applications
Equivalent Circuit and Bias Resistor Values
Maximum Ratings
Note: Mounted on an FR4 board (25.4 mm × 25.4 mm × 1.6 mmt)
Ultra-small package, suited to very high density mounting
Incorporating a bias resistor into the transistor reduces the number of parts,
so enabling the manufacture of ever more compact equipment and
lowering assembly cost.
A wide range of resistor values is available for use in various circuits.
Complementary to the RN2101MFV~RN2106MFV
Lead (Pb) - free
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
1.15
0.4
0.5
0.4
0.4
Characteristic
0.45
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
(Ta = 25°C)
RN1101MFV,RN1102MFV,RN1103MFV
RN1104MFV,RN1105MFV,RN1106MFV
0.45
RN1101MFV~1106MFV
RN1101MFV~1104MFV
RN1105MFV, 1106MFV
RN1101MFV~1106MFV
RN1101MFV
RN1102MFV
RN1103MFV
RN1104MFV
RN1105MFV
RN1106MFV
Type No.
R1 (kΩ)
4.7
2.2
4.7
10
22
47
P
Symbol
C
V
V
V
T
(Note)
CBO
CEO
EBO
I
T
stg
C
1
j
R2 (kΩ)
4.7
10
22
47
47
47
−55~150
Rating
100
150
150
50
50
10
5
RN1101MFV∼RN1106MFV
JEDEC
JEITA
TOSHIBA
Weight: 0.0015 g (typ.)
VESM
Unit
mW
mA
°C
°C
V
V
V
1
1
2
0.80 ± 0.05
1.2 ± 0.05
2-1L1A
1. BASE
2. EMITTER
3. COLLECTOR
2005-03-30
3
Unit: mm

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