S1A-E3 Vishay Semiconductors, S1A-E3 Datasheet

S1A-E3

Manufacturer Part Number

S1A-E3

Description

Manufacturer

Vishay Semiconductors

Datasheet

1.S1A-E3.pdf (4 pages)

Specifications of S1A-E3

Date_code

05+

Packing_info

SMA

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Current page: 1 of 4
Download datasheet (92Kb)

Document Number 88711

30-Jun-06

MAJOR RATINGS AND CHARACTERISTICS

MAXIMUM RATINGS (T

PARAMETER

Device marking code

Maximum recurrent peak reverse voltage

Maximum RMS voltage

Maximum DC blocking voltage

Maximum average forward rectified current (see Fig.1)

Peak forward surge current 8.3 ms single half sine-wave

superimposed on rated load

Non-repetitive peak reverse avalanche energy

at 25 °C, I

Operating junction and storage temperature range

F(AV)

= 1 A, L = 10 mH

FSM

RRM

max.

DO-214AC (SMA)

Surface Mount Glass Passivated Rectifier

= 25 °C unless otherwise noted)

50 V to 1000 V

1.0 µA, 5.0 µA

40 A, 30 A

150 °C

1.0 A

1.1 V

5 mJ

SYMBOL

, T

F(AV)

FSM

RRM

RMS

STG

FEATURES

TYPICAL APPLICATIONS

For

power supplies, inverters, converters and free-

wheeling diodes for consumer, automotive and

telecommunication.

MECHANICAL DATA

Case: DO-214AC (SMA)

Epoxy meets UL 94V-0 flammability rating

Terminals: Matte tin plated leads, solderable per

J-STD-002B and JESD22-B102D

E3 suffix for commercial grade, HE3 suffix for high

reliability grade (AEC Q101 qualified)

Polarity: Color band denotes cathode end

• Low profile package

• Ideal for automated placement

• Glass passivated chip junction

• Low forward voltage drop

• Low leakage current

• High forward surge capability

• Meets MSL level 1, per J-STD-020C, LF max peak

• Solder Dip 260 °C, 40 seconds

• Component in accordance to RoHS 2002/95/EC

S1A

of 260 °C

and WEEE 2002/96/EC

use

S1B

100

Vishay General Semiconductor

S1D

200

140

200

general

- 55 to + 150

S1G

400

280

400

1.0

purpose

S1J

600

420

600

S1A thru S1M

S1K

800

560

800

rectification

www.vishay.com

1000

S1M

700

UNIT

°C

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