MBM29LV650UE12TN Fujitsu, MBM29LV650UE12TN Datasheet

MBM29LV650UE12TN

Manufacturer Part Number

MBM29LV650UE12TN

Description

TSOP48

Manufacturer

Fujitsu

Datasheets

1.MBM29LV650UE12TN.pdf (57 pages)

2.MBM29LV650UE12TN.pdf (57 pages)

Specifications of MBM29LV650UE12TN

Date_code

01+

Current page: 1 of 57
Download datasheet (584Kb)

FUJITSU SEMICONDUCTOR

FLASH MEMORY

CMOS

64M (4M

MBM29LV650UE/651UE

Ordering Part No.

Max. Address Access Time (ns)

Max. CE Access Time (ns)

Max. OE Access Time (ns)

DESCRIPTION

The MBM29LV650UE/651UE is a 64M-bit, 3.0 V-only Flash memory organized as 4M words of 16 bits each. The

device is designed to be programmed in system with the standard system 3.0 V V

5.0 V V

EPROM programmers.

To eliminate bus contention the devices have separate chip enable (CE), write enable (WE), and output enable

(OE) controls.

The MBM29LV650UE/651UE is entirely command set compatible with JEDEC single-power-supply Flash stan-

dard. Commands are written to the command register using standard microprocessor write timings. Register

contents serve as input to an internal state-machine which controls the erase and programming circuitry. Write

cycles also internally latch addresses and data needed for the programming and erase operations.

Typically, each sector can be programmed and verified in about 0.5 seconds.

PRODUCT LINEUP

PACKAGES

DATA SHEET

are not required for write or erase operations. The devices can also be reprogrammed in standard

Part No.

(FPT-48P-M19)

16) BIT

= 3.3 V

= 3.0 V

Marking Side

+0.3 V

–0.3 V

+0.6 V

–0.3 V

48-pin plastic TSOP (I)

-90/12

Marking Side

—

MBM29LV650UE/651UE

(FPT-48P-M20)

supply. 12.0 V V

DS05-20882-2E

120

—

(Continued)

and

Related parts for MBM29LV650UE12TN

Related keywords

MBM29LV650UE12TN datasheet
MBM29LV650UE12TN data sheet
MBM29LV650UE12TN pdf datasheet
MBM29LV650UE12TN component
MBM29LV650UE12TN part
MBM29LV650UE12TN distributor
MBM29LV650UE12TN RoHS
MBM29LV650UE12TN datasheet download