MT47H32M16BN3ITD Micron Semiconductor Products, MT47H32M16BN3ITD Datasheet

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MT47H32M16BN3ITD

Manufacturer Part Number
MT47H32M16BN3ITD
Description
BGA
Manufacturer
Micron Semiconductor Products
Datasheet

Specifications of MT47H32M16BN3ITD

Date_code
05+
DDR2 SDRAM
MT47H128M4 – 32 Meg x 4 x 4 banks
MT47H64M8 – 16 Meg x 8 x 4 banks
MT47H32M16 – 8 Meg x 16 x 4 banks
Features
• Vdd = +1.8V ±0.1V, VddQ = +1.8V ±0.1V
• JEDEC-standard 1.8V I/O (SSTL_18-compatible)
• Differential data strobe (DQS, DQS#) option
• 4n-bit prefetch architecture
• Duplicate output strobe (RDQS) option for x8
• DLL to align DQ and DQS transitions with CK
• 4 internal banks for concurrent operation
• Programmable CAS latency (CL)
• Posted CAS additive latency (AL)
• WRITE latency = READ latency - 1
• Selectable burst lengths: 4 or 8
• Adjustable data-output drive strength
• 64ms, 8,192-cycle refresh
• On-die termination (ODT)
• Industrial temperature (IT) option
• Automotive temperature (AT) option
• RoHS compliant
• Supports JEDEC clock jitter specification
PDF: 09005aef82f1e6e2
Rev. M 9/08 EN
Products and specifications discussed herein are subject to change by Micron without notice.
t
CK
1
Options
• Configuration
• FBGA package (Pb-free) – x16
• FBGA package (Pb-free) – x4, x8
• FBGA package (lead solder) – x16
• FBGA package (lead solder) – x4, x8
• Timing – cycle time
• Self refresh
• Operating temperature
• Revision
– 256 Meg x 4 (32 Meg x 4 x 4 banks)
– 128 Meg x 8 (16 Meg x 8 x 4 banks)
– 64 Meg x 16 (8 Meg x 16 x 4 banks)
– 84-ball FBGA (12mm x 12.5mm) Rev. B
– 84-ball FBGA (10mm x 12.5mm) Rev. D
– 84-ball FBGA (8mm x 12.5mm) Rev. F
– 60-ball FBGA (12mm x 10mm) Rev. B
– 60-ball FBGA (10mm x 10mm) Rev. D
– 60-ball FBGA (8mm x 10mm) Rev. F
– 84-ball FBGA (12mm x 12.5mm) Rev. B
– 84-ball FBGA (10mm x 12.5mm) Rev. D
– 84-ball FBGA (8mm x 12.5mm) Rev. F
– 60-ball FBGA (12mm x 10mm) Rev. B
– 60-ball FBGA (10mm x 10mm) Rev. D
– 60-ball FBGA (8mm x 10mm) Rev. F
– 2.5ns @ CL = 5 (DDR2-800)
– 2.5ns @ CL = 6 (DDR2-800)
– 3.0ns @ CL = 4 (DDR2-667)
– 3.0ns @ CL = 5 (DDR2-667)
– 3.75ns @ CL = 4 (DDR2-533)
– 5.0ns @ CL = 3 (DDR2-400)
– Standard
– Low-power
– Commercial (0°C ≤ T
– Industrial (–40°C ≤ T
– Automotive, Revision :D only
Note:
–40°C ≤ T
(–40°C ≤ T
Micron Technology, Inc. reserves the right to change products or specifications without notice.
512Mb: x4, x8, x16 DDR2 SDRAM
1. Not all options listed can be combined to
1
define an offered product. Use the Part
Catalog Search on
product offerings and availability.
A
C
≤ 85°C)
, T
A
≤ 105°C)
C
C
≤ 95°C;
≤ 85°C)
© 2004 Micron Technology, Inc. All rights reserved.
www.micron.com
Features
Marking
:B/:D/:F
128M4
32M16
for
64M8
None
None
-25E
-37E
HW
-3E
-5E
BN
HR
GC
GB
-25
CC
CB
CF
FN
B6
AT
F6
JN
-3
IT
L

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