SI7943DP-T1 Vishay Semiconductors, SI7943DP-T1 Datasheet

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SI7943DP-T1

Manufacturer Part Number
SI7943DP-T1
Description
Manufacturer
Vishay Semiconductors
Datasheet

Specifications of SI7943DP-T1

Date_code
03+

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI7943DP-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes
a. Surface Mounted on 1" x 1" FR4 Board.
b. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is
not required to ensure adequate bottom side solder interconnection.
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
* Pb containing terminations are not RoHS compliant, exemptions may apply.
Document Number: 71629
S-52555-Rev. C, 19-Dec-05
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
THERMAL RESISTANCE RATINGS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
V
DS
– 30
Ordering Information:
(V)
8
D1
6.15 mm
7
D1
0.030 at V
0.045 at V
0.025 at V
6
D2
PowerPAK SO-8
Bottom View
r
DS(on)
5
Si7943DP-T1
Si7943DP-T1—E3 (Lead (Pb)-free)
J
a
D2
Parameter
Parameter
= 150 °C)
GS
GS
GS
a
Dual P-Channel 30-V (D-S) MOSFET
(Ω)
= – 4.5 V
= – 2.5 V
= – 10 V
1
S1
2
a
G1
3
S2
a
5.15 mm
4
b,c
G2
A
I
– 9.4
– 8.6
– 7.0
= 25 °C, unless otherwise noted
New Product
D
Steady State
Steady State
(A)
T
T
T
T
t ≤ 10 sec
A
A
A
A
= 25 °C
= 70 °C
= 25 °C
= 70 °C
FEATURES
APPLICATIONS
• TrenchFET
• New Low Thermal Resistance PowerPAK
• 1–2 Cell Li-Ion Battery Switch
• Bus Load Switch for Notebook/Desktop Computers
Symbol
Symbol
G
T
R
R
J
Package with Low 1.07-mm Profile
1
V
V
I
P
, T
I
DM
thJA
thJC
I
DS
GS
D
S
D
P-Channel MOSFET
stg
S
D
1
1
®
Power MOSFET
10 secs
Typical
– 9.4
– 7.5
– 2.9
3.5
2.2
2.2
26
60
– 55 to 150
± 12
– 30
– 30
260
G
2
Steady State
P-Channel MOSFET
Maximum
– 6.0
– 4.8
– 1.2
1.4
0.9
2.7
35
85
Vishay Siliconix
D
S
2
2
Si7943DP
www.vishay.com
®
°C/W
Unit
Unit
RoHS*
COMPLIANT
°C
W
V
A
Available
Pb-free
1

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