MT45W4MW16BCGB-701IT Micron Semiconductor Products, MT45W4MW16BCGB-701IT Datasheet

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MT45W4MW16BCGB-701IT

Manufacturer Part Number
MT45W4MW16BCGB-701IT
Description
Manufacturer
Micron Semiconductor Products
Datasheet

Specifications of MT45W4MW16BCGB-701IT

Pack_quantity
377
Comm_code
85423245
Lead_time
84
Eccn
3A991B2A
Async/Page/Burst CellularRAM
MT45W4MW16BCGB
Features
• Single device supports asynchronous, page, and
• V
• Random access time: 70ns
• Burst mode READ and WRITE access
• Page mode read access
• Low power consumption
• Low-power features
PDF: 09005aef8247bd51/Source: 09005aef8247bd83
64mb_burst_cr1_5_p25z_133mhz__1.fm - Rev. F 9/07 EN
Options
• Configuration:
• Package
• Access time
• Frequency: 133 MHz
burst operations
– 1.7–1.95V V
– 1.7–3.3V V
– 4, 8, 16, or 32 words or continuous burst
– Burst wrap or sequential
– MAX clock rate: 133 MHz
– Burst initial latency: 37.5ns (5 clocks) at 133 MHz
– 16-word page size
– Interpage read access: 70ns
– Intrapage read access: 20ns
– Asynchronous READ: <25mA
– Intrapage READ: <15mA
– Initial access, burst READ:
– Continuous burst READ: <40mA
– Standby: <50µA (TYP at 25 °C)
– Deep power-down (DPD): <3µA (TYP)
– On-chip temperature-compensated refresh (TCR)
– Partial-array refresh (PAR)
– DPD mode
4 Meg x 16
V
1.7–1.95V
V
1.7–3.3V
54-ball VFBGA (“green”)
70ns
104 MHz
80 MHz
CC
CC
CC
t
(37.5ns [5 clocks] at 133 MHz) <45mA
ACLK: 5.5ns at 133 MHz
, V
Q I/O voltage supply:
core voltage supply:
CC
1
Q voltages:
CC
Products and specifications discussed herein are subject to change by Micron without notice.
CC
Q
1
1
(
t
CLK = 7.5ns)
64Mb: 4 Meg x 16 Async/Page/Burst CellularRAM 1.5 Memory
MT45W4MW16BC
Designator
-70
GB
13
1
8
1
Figure 1:
Notes: 1. The 3.3V I/O voltage and 133 MHz clock fre-
Options (continued)
• Standby power at 85°C
• Operating temperature range
– Standard: 140µA (MAX)
– Low power: 120µA (MAX)
– Wireless (–30°C to +85°C)
– Industrial (–40°C to +85°C)
Micron Technology, Inc., reserves the right to change products or specifications without notice.
MT45W4MW16BCGB-701LWT
A
D
G
H
B
C
E
F
J
quency exceed the CellularRAM 1.5 Work-
group specification.
DQ14
DQ15
WAIT
V
V
DQ8
DQ9
A18
LB#
CC
SS
1
54-Ball VFBGA Ball Assignment
Q
Q
Part Number Example:
®
DQ10
DQ11
DQ12
DQ13
OE#
UB#
A19
CLK
A8
2
1.5 Memory
ADV#
(Ball down)
A17
A21
A14
A12
A0
A3
A5
A9
Top view
3
©2005 Micron Technology, Inc. All rights reserved.
A16
A15
A13
A10
RFU
A1
A4
A6
A7
4
DQ1
DQ3
DQ4
DQ5
WE#
A11
RFU
CE#
A2
5
Designator
DQ0
DQ2
DQ6
DQ7
CRE
A20
RFU
V
V
6
CC
SS
None
WT
Features
IT
L

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