ELC-810-21 EPIGAP [EPIGAP optoelectronic GmbH], ELC-810-21 Datasheet
ELC-810-21
Manufacturer Part Number
ELC-810-21
Description
LED - Chip
Manufacturer
EPIGAP [EPIGAP optoelectronic GmbH]
Datasheet
1.ELC-810-21.pdf
(1 pages)
1
2
equipment (for information only)
Optical and Electrical Characteristics
T
Labeling
Packing: Chips on adhesive film with wire-bond side on top
Forward voltage
Forward voltage
Reverse voltage
Radiant power
Radiant power
Peak wavelength
Spectral bandwidth at 50%
Switching time
Measured on bare chip on TO-18 header with EPIGAP equipment
Measured on bare chip glued on a Ø 8 x 1mm Cu header (10 s after switched on) with EPIGAP
amb
Preliminary
LED - Chip
= 25°C, unless otherwise specified
ELС-810-21
Parameter
Radiation
Infrared
Type
1
2
2
EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201
1000
PoC-05
I
I
I
F
I
F
I
I
I
I
conditions
F
F
F
F
F
R
= 350 mA
= 350 mA
= 20 mA
= 20 mA
= 20 mA
= 20 mA
= 20 mA
= 10 µA
Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545
Test
Lot N°
Type
DDH
Symbol
∆λ
t
V
V
V
Φ
Φ
λ
r
, t
P
F
F
R
0.5
e
e
f
typ. thickness
150 (±25) µm
cathode
gold alloy, 1.5 µm
anode
gold alloy, 0.5 µm
dotted, 25% covered
Φ
typ. dimensions (µm)
e
(typ) [mW]
800
Min
2.0
35
5
AlGaAs/AlGaAs
Technology
V
10.04.2007
F
(typ) [V]
810
Typ
1.4
1.7
2.4
40
30
60
ELС-810-21
Max
815
1.6
2.0
N (cathode) up
Electrodes
Quantity
rev. 08/06
1 of 1
mW
mW
Unit
nm
nm
ns
V
V
V
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