EL2008CT Elantec Inc, EL2008CT Datasheet

EL2008CT

Manufacturer Part Number

EL2008CT

Description

TO-220

Manufacturer

Elantec Inc

Datasheet

1.EL2008CT.pdf (12 pages)

Specifications of EL2008CT

Date_code

04+

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

EL2008CT

Manufacturer:

ELAMTEC

Quantity:

5 510

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

EL2008CT

Manufacturer:

IXYS

Quantity:

30 000

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Note: All information contained in this data sheet has been carefully checked and is believed to be accurate as of the date of publication; however, this data sheet cannot be a “controlled document”. Current revisions, if any, to these

specifications are maintained at the factory and are available upon your request. We recommend checking the revision level before finalization of your design documentation.

Features

Applications

Ordering Information

Connection Diagrams

• High slew rate 2500 V/µs

• Wide bandwidth 100MHz @ R

• Output current 1A continuous

• Output impedance 1

• Quiescent current 13mA

• Short circuit protected

• Power package with isolated metal

• Video distribution amplifier

• Fast op amp booster

• Flash converter driver

• Motor driver

• Pulse transformer driver

• A.T.E. pin driver

EL2008CT

Part No.

50 and 55MHz @ R

tab

Temp. Range

0°C to +75°C

5-Pin TO-220

Top View

Package

TO-220

= 10

MDP0028

Outline#

EL2008C

55 MHz 1 Amp Buffer Amplifier

General Description

The EL2008C is a patented high speed bipolar monolithic buffer

amplifier designed to provide currents over 1 amp at high frequencies,

while drawing only 13 mA of quiescent supply current. The

EL2008C's 1500 V/µs slew rate and 55 MHz bandwidth driving a 10

load is second only to the EL2009 and insures stability in fast op amp

feedback loops. Elantec has applied for patents on unique circuitry

within the EL2008C.

Used as an open loop buffer, the EL2008C's low output impedance

(1 ) gives a gain of 0.99 when driving a 100 load and 0.9 driving a

which will protect the device under both a DC fault condition and AC

operation with reactive loads.

The EL2008C is constructed using Elantec's proprietary Complemen-

tary Bipolar process that produces PNP and NPN transistors with

essentially identical AC and DC characteristics. In the EL2008C, the

Complementary Bipolar process also insulates the package's metal

heat sink tab from all supply voltages. Therefore the tab may be

mounted to an external heat sink or the chassis without an insulator.

The EL2008CT is specified for operation over the 0°C to +75°C tem-

perature range and is provided in a 5-lead TO-220 plastic power

package.

Simplified Schematic

Manufactured under U.S. Patent No. 4,833,424 and 4,827,223 and U.K. Patent No. 2217134.

load. The EL2008C has output short circuit current limiting

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