K6R4016C1D-TC8 Samsung, K6R4016C1D-TC8 Datasheet
K6R4016C1D-TC8
Manufacturer Part Number
K6R4016C1D-TC8
Description
Manufacturer
Samsung
Datasheet
1.K6R4004C1D-KC10.pdf
(12 pages)
Specifications of K6R4016C1D-TC8
Case
TSOP
Date_code
06
K6R4016C1D
Document Title
Revision History
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to c hange the
Rev No.
Rev. 0.0
Rev. 0.1
Rev. 0.2
Rev. 0.3
Rev. 0.4
Rev. 1.0
Rev. 2.0
256Kx16 Bit High Speed Static RAM(5.0V Operating).
Operated at Commercial and Industrial Temperature Ranges.
History
Initial release with Preliminary.
Package dimension modify on page 11.
Change Icc, Isb and Isb1
1. Correct AC parameters : Read & Write Cycle
2. Corrrect Power part : Delete "P-Industrial,Low Power" part
3. Delete Data Retention Characteristics
1. Delete 15ns speed bin.
2. Change Icc for Industrial mode.
1. Final datasheet release.
2. Delete 12ns speed bin.
1. Add the Lead Free Package type.
I
CC(Commercial)
I
I
CC(Industrial)
CC(Industrial)
I
SB1(Normal)
Item
Item
I
SB
10ns
12ns
15ns
10ns
12ns
15ns
10ns
12ns
Previous
Previous
115mA
100mA
85mA
75mA
90mA
80mA
70mA
85mA
30mA
10mA
PRELIMPreliminaryPPPPPPPPPINARY
- 1 -
Current
Current
75mA
65mA
65mA
55mA
45mA
85mA
75mA
65mA
20mA
5mA
September. 7. 2001
Septermber.28. 2001
November, 3, 2001
November, 23, 2001
December, 18, 2001
July, 09, 2002
June. 20, 2003
Draft Data
CMOS SRAM
Preliminary
Preliminary
Preliminary
Preliminary
Preliminary
Final
Final
Remark
June 2003
Rev 2.0
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