SST29LE010-150-4C-EH Silicon Storage Technology, Inc, SST29LE010-150-4C-EH Datasheet

SST29LE010-150-4C-EH

Manufacturer Part Number

SST29LE010-150-4C-EH

Description

Manufacturer

Silicon Storage Technology, Inc

Datasheets

1.SST29LE010-150-4C-EH.pdf (25 pages)

2.SST29LE010-150-4C-EH.pdf (26 pages)

3.SST29LE010-150-4C-EH.pdf (30 pages)

Specifications of SST29LE010-150-4C-EH

Case

TSOP

Date_code

06+

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FEATURES:

• Single Voltage Read and Write Operations

• Superior Reliability

• Low Power Consumption

• Fast Page-Write Operation

• Fast Read Access Time

PRODUCT DESCRIPTION

The SST29LE010 is a 128K x8 CMOS Page-Write

EEPROM manufactured with SST’s proprietary, high-per-

formance CMOS SuperFlash technology. The split-gate

cell design and thick-oxide tunneling injector attain better

reliability and manufacturability compared with alternate

approaches. The SST29LE010 writes with a single power

supply. Internal Erase/Program is transparent to the user.

The SST29LE010 conforms to JEDEC standard pinouts

for byte-wide memories.

Featuring high performance Page-Write, the SST29LE010

provides a typical Byte-Write time of 39 µsec. The entire

memory, i.e., 128 KByte, can be written page-by-page in as

little as 5 seconds, when using interface features such as

Toggle Bit or Data# Polling to indicate the completion of a

Write cycle. To protect against inadvertent write, the

SST29LE010 has on-chip hardware and Software Data

Protection schemes. Designed, manufactured, and tested

for a wide spectrum of applications, the SST29LE010 is

offered with a guaranteed Page-Write endurance of 10,000

cycles. Data retention is rated at greater than 100 years.

S71061(01)-00-EOL

– 3.0-3.6V for SST29LE010

– Endurance: 100,000 Cycles (typical)

– Greater than 100 years Data Retention

– Active Current: 10 mA (typical) for 3.0V

– Standby Current: 10 µA (typical)

– 128 Bytes per Page, 1024 Pages

– Page-Write Cycle: 5 ms (typical)

– Complete Memory Rewrite: 5 sec (typical)

– Effective Byte-Write Cycle Time: 39 µs (typical)

– 3.0-3.6V operation: 150 ns

1 Mbit (128K x8) Page-Write EEPROM

SST29EE / LE / VE0101Mb (x8) Page-Write, Small-Sector flash memories

9/05

SST29LE010

The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc.

• Latched Address and Data

• Automatic Write Timing

• End of Write Detection

• Hardware and Software Data Protection

• Product Identification can be accessed via

• TTL I/O Compatibility

• JEDEC Standard

• Packages Available

• All non-Pb (lead-free) devices are RoHS compliant

The SST29LE010 is suited for applications that require

convenient and economical updating of program, con-

figuration, or data memory. For all system applications,

the SST29LE010 significantly improves performance

and reliability, while lowering power consumption. The

SST29LE010 improves flexibility while lowering the

cost for program, data, and configuration storage

applications.

To meet high density, surface mount requirements, the

SST29LE010 is offered in a 32-lead PLCC and 32-lead

TSOP packages. See Figures 1 and 2 for pin assignments.

Device Operation

The SST Page-Write EEPROM offers in-circuit electrical

write capability. The SST29LE010 does not require sepa-

rate Erase and Program operations. The internally timed

Write cycle executes both Erase and Program transpar-

ently to the user. The SST29LE010 has industry standard

optional Software Data Protection, which SST recom-

mends always to be enabled. The SST29LE010 is compat-

ible with industry standard EEPROM pinouts and

functionality.

– Internal V

– Toggle Bit

– Data# Polling

Software Operation

– Flash EEPROM Pinouts and command sets

– 32-lead PLCC

– 32-lead TSOP (8mm x 14mm, 8mm x 20mm)

Generation

These specifications are subject to change without notice.

SSF is a trademark of Silicon Storage Technology, Inc.

EOL Product Data Sheet

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