MX29F004TTC-12 Macronix International Co., MX29F004TTC-12 Datasheet

MX29F004TTC-12

Manufacturer Part Number

MX29F004TTC-12

Description

Manufacturer

Macronix International Co.

Datasheets

1.MX29F004TTC-12.pdf (39 pages)

2.MX29F004B.pdf (39 pages)

3.MX29F004TTC-12.pdf (39 pages)

Specifications of MX29F004TTC-12

Case

TSOP

Date_code

06+

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

MX29F004TTC-12

Manufacturer:

CISCOSYST

Quantity:

465

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Download datasheet (867Kb)

FEATURES

• 524,288 x 8 only

• Single power supply operation

• Fast access time: 70/90/120ns

• Low power consumption

• Command register architecture

• Auto Erase (chip & sector) and Auto Program

• Erase suspend/Erase Resume

GENERAL DESCRIPTION

The MX29F004T/B is a 4-mega bit Flash memory

organized as 512K bytes of 8 bits.

memories offer the most cost-effective and reliable read/

write non-volatile random access memory.

MX29F004T/B is packaged in 32-pin PLCC, TSOP,

PDIP. It is designed to be reprogrammed and erased in

system or in standard EPROM programmers.

The standard MX29F004T/B offers access time as fast

as 70ns, allowing operation of high-speed

microprocessors without wait states. To eliminate bus

contention, the MX29F004T/B has separate chip enable

(CE) and output enable (OE ) controls.

MXIC's Flash memories augment EPROM functionality

with in-circuit electrical erasure and programming. The

MX29F004T/B uses a command register to manage this

functionality. The command register allows for 100%

TTL level control inputs and fixed power supply levels

P/N:PM0554

- 5.0V only operation for read, erase and program

operation

- 30mA maximum active current(5MHz)

- 1uA typical standby current

- Byte Programming (7us typical)

- Sector Erase

(Sector structure:16KB/8KB/8KB/32KB and 64KBx7)

- Automatically erase any combination of sectors

with Erase Suspend capability.

- Automatically program and verify data at specified

address

MXIC's Flash

The

4M-BIT [512KX8] CMOS FLASH MEMORY

• Status Reply

• Chip protect/unprotect for 5V only system or 5V/

• 100,000 minimum erase/program cycles

• Latch-up protected to 100mA from -1V to VCC+1V

• Low VCC write inhibit is equal to or less than 3.2V

• Package type:

• Compatibility with JEDEC standard

• 20 years data retention

during erase and programming, while maintaining

maximum EPROM compatibility.

MXIC Flash technology reliably stores memory

contents even after 100,000 erase and program

cycles. The MXIC cell is designed to optimize the

erase and programming mechanisms. In addition,

the combination of advanced tunnel oxide

processing and low internal electric fields for erase

and program operations produces reliable cycling.

The MX29F004T/B uses a 5.0V±10% VCC supply

to perform the High Reliability Erase and auto

Program/Erase algorithms.

The highest degree of latch-up protection is

achieved with MXIC's proprietary non-epi process.

Latch-up protection is proved for stresses up to

100 milliamps on address and data pin from -1V to

VCC + 1V.

- Suspends an erase operation to read data from,

or program data to, another sector that is not being

erased, then resumes the erase.

- Data polling & Toggle bit for detection of program

and erase cycle completion.

12V system.

- 32-pin PLCC, TSOP or PDIP

- Pinout and software compatible with single-power

supply Flash

MX29F004T/B

REV. 1.4, JUN. 12, 2001

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