MBM29F033C-70PTN Fujitsu, MBM29F033C-70PTN Datasheet

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MBM29F033C-70PTN

Manufacturer Part Number
MBM29F033C-70PTN
Description
Manufacturer
Fujitsu
Datasheet

Specifications of MBM29F033C-70PTN

Case
TSSOP
Date_code
04+

Available stocks

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Part Number
Manufacturer
Quantity
Price
Part Number:
MBM29F033C-70PTN
Manufacturer:
SUNTO
Quantity:
12 000
Part Number:
MBM29F033C-70PTN
Manufacturer:
FUJITSU/富士通
Quantity:
20 000
FUJITSU SEMICONDUCTOR
FLASH MEMORY
CMOS
32M (4M
MBM29F033C
Embedded Erase™, Embedded Program™ and ExpressFlash™ are trademarks of Advanced Micro Devices, Inc.
FEATURES
• Single 5.0 V read, write, and erase
• Compatible with JEDEC-standard commands
• 40-pin TSOP (I) (Package suffix: PTN-Normal Bend Type, PTR-Reversed Bend Type)
• Minimum 100,000 write/erase cycles
• High performance
• Sector erase architecture
• Embedded Erase
• Embedded Program
• Data Polling and Toggle Bit feature for detection of program or erase cycle completion
• Ready/BUSY output (RY/BY)
• Low V
• Hardware RESET pin
• Erase Suspend/Resume
• Sector group protection
• Temporary sector groups unprotection
DATA SHEET
Minimizes system level power requirements
Pinout and software compatible with single-power supply Flash
Superior inadvertent write protection
70 ns maximum access time
Uniform sectors of 64K bytes each
Any combination of sectors can be erased. Also supports full chip erase
Automatically preprograms and erases the chip or any sector
Automatically programs and verifies data at specified address
Hardware method for detection of program or erase cycle completion
Resets internal state machine to the read mode
Supports reading or programming data to a sector not being erased
Hardware method that disables any combination of sector groups from write or erase operation (a sector group
consists of 4 adjacent sectors of 64K bytes each)
Hardware method temporarily enable any combination of sectors from write or erase operations
CC
write inhibit
TM
Algorithms
TM
Algorithms
3.2 V
-70/-90/-12
8) BIT
DS05-20869-3E

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