K4S640432H-UC SAMSUNG [Samsung semiconductor], K4S640432H-UC Datasheet - Page 7

• Manufacturer Part Number: K4S640432H-UC
• Description: 64Mb H-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant)
• Manufacturer: SAMSUNG [Samsung semiconductor]

Note :
CAPACITANCE
Notes :
ABSOLUTE MAXIMUM RATINGS
DC OPERATING CONDITIONS
Recommended operating conditions (Voltage referenced to V
SDRAM 64Mb H-die (x4, x8, x16)
Notes :
Clock
RAS, CAS, WE, CS, CKE, DQM
Address
DQ
Voltage on any pin relative to V
Voltage on V
Storage temperature
Power dissipation
Short circuit current
Supply voltage
Input logic high voltage
Input logic low voltage
Output logic high voltage
Output logic low voltage
Input leakage current
0
~ DQ
Permanent device damage may occur if "ASOLUTE MAXIMUM RATINGS" are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
1. -75 only specify a maximum value of 3.5pF
2. -75 only specify a maximum value of 3.8pF
3. -75 only specify a maximum value of 6.0pF
1. V
2. V
3. Any input 0V ≤ V
Parameter
3
Input leakage currents include Hi-Z output leakage for all bi-directional buffers with Tri-State outputs.
IH
IL
DD
(min) = -2.0V AC. The undershoot voltage duration is ≤ 3ns.
Parameter
(max) = 5.6V AC.The overshoot voltage duration is ≤ 3ns.
supply relative to V
Pin
(V
DD
= 3.3V, T
IN
≤ V
SS
DDQ
SS
A
V
.
= 23°C, f = 1MHz, V
Symbol
DD
V
V
V
V
, V
I
OH
OL
LI
IH
IL
DDQ
Symbol
C
C
C
V
V
C
Symbol
ADD
OUT
DD
CLK
IN
IN
T
Min
-0.3
-10
, V
3.0
2.0
2.4
I
, V
P
STG
OS
-
REF
D
OUT
DDQ
SS
=1.4V ± 200 mV)
= 0V, T
A
Min
2.5
2.5
2.5
4.0
= 0 to 70°C)
Typ
3.3
3.0
0
-
-
-
V
-55 ~ +150
DD
-1.0 ~ 4.6
-1.0 ~ 4.6
Max
3.6
0.8
0.4
Max
10
4.0
5.0
5.0
6.5
Value
-
+0.3
50
1
Rev. 1.3 August 2004
Unit
uA
V
V
V
V
V
Unit
CMOS SDRAM
pF
pF
pF
pF
I
I
OH
OL
Unit
mA
°C
W
V
V
Note
= -2mA
= 2mA
1
2
3
Note
1
2
2
3