SSD55N03 SECOS [SeCoS Halbleitertechnologie GmbH], SSD55N03 Datasheet
SSD55N03
Related parts for SSD55N03
SSD55N03 Summary of contents
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... Elektronische Bauelemente Description The SSD55N03 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-252 is universally preferred for all commercial-industrial suited for low voltage applications surface mount applications and such as DC/DC converters. Features Repetitive Avalanche Rated ...
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... T f 7.6 _ Ciss 2326 _ Coss 331 _ Crss 174 _ Gfs Symbol Min. Typ =25 ,I =10A G AS Ω ≦ SSD55N03 55A, 25V,R 6m DS(ON) Max. Unit Test Condition =0V Reference 3 GS 20V 100 nA ± ...
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... Fig 3. On-Resistance v.s. Gate Voltage Fig 5. Forward Characteristics of Reverse Diode http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A SSD55N03 55A, 25V,R DS(ON) N-Channel Enhancement Mode Power Mos.FET Fig 2. Typical Output Characteristics Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 6. Gate Threshold Voltage v.s. Junction Temperature Any changing of specification will not be informed individual 6m Ω ...
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... V DS Fig 7. Gate Charge Characteristics Fig 9. Maximum Safe Operating Area Fig 11. Switching Time Waveform http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A SSD55N03 55A, 25V,R DS(ON) N-Channel Enhancement Mode Power Mos.FET Fig 8. Typical Capacitance Characteristics Fig 10. Effective Transient Thermal Impedance Fig 12. Gate Charge Waveform Any changing of specification will not be informed individual 6m Ω ...