R1WV3216RBG-7SI RENESAS [Renesas Technology Corp], R1WV3216RBG-7SI Datasheet
R1WV3216RBG-7SI
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R1WV3216RBG-7SI Summary of contents
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R1W V3216R Series 32Mb Advanced LPSRAM (2M wordx16bit) The R1WV3216R Series is a family of low voltage 32-Mbit static RAMs organized as 2097152-words by 16-bit, fabricated by Renesas's high-performance 0.15um CMOS and TFT technologies. The R1WV3216R Series is suitable for ...
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... R1W V3216R Series Type No. R1WV3216RSD-7S% R1WV3216RSD-8S% R1WV3216RBG-7S% R1WV3216RBG-8S Temperature version; see table below % R I REJ03C0215-0300Z Rev.3.00 2008.03.03 page Ordering Information Access time 70 ns 350-mil 52-pin plastic µ - TSOP(II 7.5mmx8.5mm f-BGA 0.75mm pitch 48ball 85 ns Temperature Range 0 ~ +70 ºC -40 ~ +85 º ...
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R1W V3216R Series 52-pin µTSOP 1 A15 2 A14 A13 3 4 A12 A11 5 A10 A19 10 CS1# WE Vcc 14 CS2 A20 17 A18 ...
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R1W V3216R Series A0 A20 CS2 CS1# LB# UB# BYTE# WE# OE# Note: BYTE# pin is supported by only 52-pin µTSOP type. REJ03C0215-0300Z Rev.3.00 2008.03.03 page Block Diagram Memory Array 1048576 Words x 16BITS OR 2097152 Words ...
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R1W V3216R Series CS1# CS2 BYTE# LB ...
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R1W V3216R Series Recommended Operating Conditions Parameter Supply voltage Input high voltage Input low voltage Ambient temperature range Note 1. –2.0V in case of AC (Pulse width temperature range depends on R/I-version. Please see table on page 2. 2. Ambient ...
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R1W V3216R Series Parameter Symbol Input capacitance Input / output capacitance Note 1. This parameter is sampled and not 100% tested. Test Conditions (Vcc=2.7~3.6V 0~+70ºC / -40~+85ºC *) Input pulse levels: VIL= 0.4V,VIH=2.4V • Input rise and fall ...
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R1W V3216R Series Read Cycle Parameter Read cycle time Address access time Chip select access time Output enable to output valid Output hold from address change LB#,UB# access time Chip select to output in low-Z LB#,UB# enable to low-Z Output ...
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R1W V3216R Series Write Cycle Parameter Write cycle time Address valid to end of write Chip selection to end of write Write pulse width LB#,UB# valid to end of write Address setup time Write recovery time Data to write time ...
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R1W V3216R Series Read Timing Waveform A 0~20 (Word Mode) A -1~20 (Byte Mode) LB#,UB# CS1# CS2 OE# WE# = "H" level DQ 0~15 (Word Mode) DQ 0~7 (Byte Mode) Note: Byte Mode is supported by only 52-pin µTSOP type. ...
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R1W V3216R Series Write Timing Waveform (1) (WE# CLOCK) A 0~20 (Word Mode) A -1~20 (Byte Mode) LB#,UB# CS1# CS2 WE# DQ 0~15 (Word Mode) DQ 0~7 (Byte Mode) Note: Byte Mode is supported by only 52-pin µTSOP type. BYTE# ...
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R1W V3216R Series Write Timing Waveform (2) (CS1#, CS2 CLOCK, OE#=V A 0~20 (Word Mode) A -1~20 (Byte Mode) LB#,UB# CS1# CS2 WE# DQ 0~15 (Word Mode) DQ 0~7 (Byte Mode) Note: Byte Mode is supported by only 52-pin µTSOP ...
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R1W V3216R Series Write Timing Waveform (3) (LB#,UB# CLOCK, OE#=V A 0~20 (Word Mode) A -1~20 (Byte Mode) LB#,UB# CS1# CS2 WE# DQ 0~15 (Word Mode) DQ 0~7 (Byte Mode) Note: Byte Mode is supported by only 52-pin µTSOP type. ...
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R1W V3216R Series Parameter Vcc for data retention Data retention current Chip deselect to data retention time Operation recovery time Note 1. Typical parameter indicates the value for the center of distribution at Vcc=3.0V (Ta= 25ºC) and not 100% tested. ...
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R1W V3216R Series Low Vcc Data Retention Timing Waveform (1) (CS1# Controlled) t CDR Vcc 2.7V 2. CS1# 0V Note: BYTE# pin is supported by only 52-pin µTSOP type. BYTE# ≥ Vcc-0.2V or BYTE# ≤ 0.2V Low Vcc ...
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Notes: 1. This document is provided for reference purposes only so that Renesas customers may select the appropriate Renesas products for their use. Renesas neither makes warranties or representations with respect to the accuracy or completeness of the information contained ...