KC857T KEXIN [Guangdong Kexin Industrial Co.,Ltd], KC857T Datasheet

no-image

KC857T

Manufacturer Part Number
KC857T
Description
PNP General Purpose Transistors
Manufacturer
KEXIN [Guangdong Kexin Industrial Co.,Ltd]
Datasheet
SMD Type
collector cut-off current
emitter cut-off current
DC current gain
collector-emitter saturation voltage
base-emitter voltage
collector capacitance
emitter capacitance
noise figure
transition frequency
* Pulse test: tp
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current (DC)
Peak collector current
Junction temperature
Storage temperature
Low current (max. 100 mA)
Low voltage (max. 45 V).
power dissipation
Electrical Characteristics Ta = 25
Marking
Absolute Maximum Ratings Ta = 25
Features
Marking
NO.
Parameter
KC857AT
300 ms;
Parameter
3E
PNP General Purpose Transistors
0.02.
KC857BT
KC857AT
KC857BT
KC857CT
3F
KC857T
Symbol
KC857CT
V
I
I
V
h
CBO
CEsat
EBO
C
C
f
F
FE
BE
T
c
e
3G
Symbol
V
V
V
T
I
P
CBO
CEO
EBO
I
CM
T
C
stg
I
I
I
I
I
I
I
I
I
I
I
1 kHz; B = 200 Hz
I
D
j
E
E
C
C
C
C
C
C
E
C
C
C
= 0; V
= 0; V
= -10 mA; I
= -2 mA; V
= i
= -200
= 0; V
= -2 mA; V
= -100 mA; I
= -10 mA; V
= i
= -10 mA; V
e
c
= 0; V
= 0; V
(BC857T)
CB
CB
EB
-65 to +150
=- 30 V
= -30 V; T
= -5 V
A; V
Rating
CB
EB
Testconditons
CE
CE
-100
-200
B
150
150
-50
-45
-5
CE
CE
B
= -0.5 mA
= -500 mV; f = 1 MHz
= -10 V; f = 1 MHz
= -5 V
CE
= -5 V
=- 5 mA; *
= -5 V
= -5 V; f = 100 MHz
= -5 V; R
j
= 150
S
Unit
mW
mA
mA
V
V
V
= 2 k ;f =
2
0.5
0.2
SOT-523
3
+0.1
-0.1
1.6
1.0
+0.05
-0.05
+0.1
-0.1
+0.1
-0.1
-600
125
220
420
100
Min
1
0.3
www.kexin.com.cn
Transistors
+0.25
-0.05
Typ
10
Unit: mm
-750
-820
Max
-100
250
475
800
-200
-400
2.5
-15
10
-5
0.1
1. Base
2. Emitter
3. Collecter
+0.01
-0.01
MHz
Unit
mV
mV
mV
mV
nA
nA
pF
pF
dB
A
1

Related parts for KC857T

Related keywords