HS9-2100RH-8 INTERSIL [Intersil Corporation], HS9-2100RH-8 Datasheet - Page 2

• Manufacturer Part Number: HS9-2100RH-8
• Description: Radiation Hardened High Frequency Half Bridge Driver
• Manufacturer: INTERSIL [Intersil Corporation]

Die Characteristics
DIE DIMENSIONS:
INTERFACE MATERIALS:
Glassivation:
Top Metallization:
Substrate:
Metallization Mask Layout
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out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
4710 m x 3570 m (186 mils x 141 mils)
Thickness: 483 m 25.4 m (19 mils 1 mil)
Type: PSG (Phosphorous Silicon Glass)
Thickness: 8.0k
Type: ALSiCu
Thickness: 16.0k
Radiation Hardened Silicon Gate,
Dielectric Isolation
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
V
COM (2)
LIN (14)
SD (13)
V
SS
LO (1)
CC
(15)
(3)
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Å
Å
1.0k
2k
Å
Å
2
HS-2100RH
HS-2100RH
Backside Finish:
ASSEMBLY RELATED INFORMATION:
Substrate Potential:
ADDITIONAL INFORMATION:
Worst Case Current Density:
Transistor Count:
Silicon
Unbiased (DI)
<2.0 x 10
125
5
A/cm
2
HIN (12)
V
HO (8)
VB (7)
VS (6)
DD
(11)