HFD1N70 SEMIHOW [SemiHow Co.,Ltd.], HFD1N70 Datasheet - Page 3

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HFD1N70

Manufacturer Part Number
HFD1N70
Description
700V N-Channel MOSFET
Manufacturer
SEMIHOW [SemiHow Co.,Ltd.]
Datasheet
Typical Characteristics
250
200
150
100
80
70
60
50
40
30
20
10
50
0
0
0.0
10
Figure 5. Capacitance Characteristics
Figure 3. On Resistance Variation vs
-1
Figure 1. On Region Characteristics
Drain Current and Gate Voltage
0.3
0.6
V
DS
0.9
, Drain-Source Voltage [V]
I
D
10
, Drain Current [A]
0
C
C
C
1.2
iss
rss
oss
1.5
V
GS
V
= 20V
1.8
GS
C
C
C
iss
oss
rss
= 10V
= C
= C
= C
* Note : T
10
gs
gd
ds
1
2.1
+ C
+ C
※ Note ;
gd
gd
J
1. V
2. f = 1 MHz
(C
= 25
ds
GS
2.4
= shorted)
o
C
= 0 V
2.7
12
10
8
6
4
2
0
Figure 4. Body Diode Forward Voltage
0
Figure 6. Gate Charge Characteristics
Figure 2. Transfer Characteristics
Variation with Source Current
1
Q
and Temperature
G
V
, Total Gate Charge [nC]
DS
V
V
DS
= 560V
DS
2
= 350V
= 140V
3
* Notes : I
◎ SEMIHOW REV.A0,Dec 2008
4
D
= 0.8 A
5

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