ACE2303B ACE [ACE Technology Co., LTD.], ACE2303B Datasheet - Page 2

• Manufacturer Part Number: ACE2303B
• Description: P-Channel Enhancement Mode Field Effect Transistor
• Manufacturer: ACE [ACE Technology Co., LTD.]

Electrical Characteristics
T
Note: 1. Pulse width limited by maximum junction temperature
A
=25
Static Drain-Source On-Resistance
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage, Reverse
Gate-Body Leakage, Forward
2. Pulse test: PW≦300us, duty cycle≦2%
3. Guaranteed by design, not subject to production testing.
4. Surface Mounted on FR4 Board, t < 5 sec.
Drain-Source Diode Forward
Drain-Source Diode Forward
O
Forward Transconductance
C unless otherwise noted
Gate Threshold Voltage
Feedback Capacitance
Turn-On Delay Time
Turn-Off Delay Time
Output Capacitance
Turn-On Rise Time
Turn-Off Fall Time
Input Capacitance
Parameter
Current
Voltage
(4)
(2)
Drain-source diode characteristics and maximum ratings
Switching characteristics
Dynamic characteristics
Symbol
P-Channel Enhancement Mode Field Effect Transistor
V
R
V
I
T
(BR)DSS
I
t
C
I
DS(ON)
C
V
GSSF
GSSR
C
On characteristics
g
GS(th)
d(off)
DSS
d(on)
Off characteristics
I
t
t
FS
oss
SD
rss
S
iss
f
f
V
V
V
I
V
V
V
V
D
V
DS
V
GS
GS
GS
=-1A, V
V
DS
GS
GS
DS
I
DS
S
=V
DD
=-10V, I
Conditions
=0V, I
=+20V, V
=-1A,V
=-30V, V
=-20V, V
=-4.5V, I
=-5V, I
=-6V, V
f=1.0MHz
=-6V,R
GS
R
G
, I
(2)
=6Ω
GEN
D
D
=-250uA
D
GS
=-250uA
(3)
D
(3)
=-2.8A
GS
L
=-4.1A
=-4.5V
GS
DS
D
=0V
DS
=6Ω
=-3A
=0V
=0V
=0V
=0V
Min.
-0.6
-30
-1
4
Typ.
-1.6
-0.8
680
ACE2303B
69
48
72
58
6
-1.35
Max.
-100
VER 1.2
100
-2.0
87
58
20
10
65
45
-1
-1
Unit
mΩ
uA
nA
nA
pF
ns
V
V
S
A
V
2