BSP123_10 INFINEON [Infineon Technologies AG], BSP123_10 Datasheet - Page 7

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BSP123_10

Manufacturer Part Number
BSP123_10
Description
SIPMOS Small-Signal-Transistor
Manufacturer
INFINEON [Infineon Technologies AG]
Datasheet
13 Typ. gate charge
V
GS
= f (Q
V
16
12
10
8
6
4
2
0
0
BSP123
0.2 V
0.5 V
0.8 V
I
D
0.4
G
DS max
DS max
DS max
= 0.37 A pulsed, T
); parameter: V
0.8
1.2
1.6
DS
j
2
= 25 °C
,
nC
Q
G
2.8
Page 7
Rev. 1.5
14 Drain-source breakdown voltage
V
(BR)DSS
120
114
112
110
108
106
104
102
100
V
98
96
94
92
90
-60
BSP123
= f (T
-20
j
)
20
60
100
2010-06-22
BSP123
°C
T
j
180

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