NP74N04YUG RENESAS [Renesas Technology Corp], NP74N04YUG Datasheet

no-image

NP74N04YUG

Manufacturer Part Number
NP74N04YUG
Description
MOS FIELD EFFECT TRANSISTOR
Manufacturer
RENESAS [Renesas Technology Corp]
Datasheet
NP74N04YUG
MOS FIELD EFFECT TRANSISTOR
Description
The NP74N04YUG is N-channel MOS Field Effect Transistor designed for high current switching applications.
Features
• Low on-state resistance
• Low Ciss: Ciss = 3620 pF TYP. (V
• Designed for automotive application and AEC-Q101 qualified
• Small size package 8-pin HSON
Ordering Information
NP74N04YUG -E1-AY
NP74N04YUG -E2-AY
Note:
Absolute Maximum Ratings (T
Drain to Source Voltage (V
Gate to Source Voltage (V
Drain Current (DC) (T
Drain Current (pulse)
Total Power Dissipation (T
Total Power Dissipation (T
Channel Temperature
Storage Temperature
Repetitive Avalanche Current
Repetitive Avalanche Energy
Thermal Resistance
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
Notes:
R07DS0017EJ0100 Rev.1.00
Jul 01, 2010
⎯ R
1. Pb-free (This product does not contain Pb in the external electrode.)
*3. T
1. T
2. Mounted on glass epoxy substrate of 40 mm x 40 mm x 0.8 mmt
DS(on)
Part No.
C
ch(peak)
= 5.5 mΩ MAX. (V
= 25°C, PW ≤ 10
Item
≤ 150°C, R
C
∗ 1
∗ 1
∗ 1
= 25°C)
DS
C
A
GS
= 25°C)
= 25°C)
= 0 V)
= 0 V)
∗ 3
∗ 3
G
μ
= 25 Ω
s, Duty Cycle ≤ 1%
GS
Pure Sn (Tin)
∗ 2
= 10 V, I
LEAD PLATING
DS
V
V
I
I
P
P
T
T
I
E
∗ 2
D(DC)
D(pulse)
AR
= 25 V, V
ch
stg
DSS
GSS
T1
T2
AR
A
Symbol
= 25°C)
D
= 37.5 A)
R
R
th(ch-C)
th(ch-A)
GS
= 0 V)
Tape 2500 p/reel
1.25
150
PACKING
°C/W
°C/W
−55 to +175
Ratings
Preliminary
±225
±20
±75
120
175
102
1.0
40
32
8-pin HSON, Taping (E1 type)
8-pin HSON, Taping (E2 type)
R07DS0017EJ0100
Data Sheet
Package
Jul 01, 2010
Page 1 of 6
Rev.1.00
Unit
mJ
°C
°C
W
W
V
V
A
A
A

Related parts for NP74N04YUG

NP74N04YUG Summary of contents

Page 1

... NP74N04YUG MOS FIELD EFFECT TRANSISTOR Description The NP74N04YUG is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance ⎯ 5.5 mΩ MAX. (V DS(on) GS • Low Ciss: Ciss = 3620 pF TYP. (V • Designed for automotive application and AEC-Q101 qualified • ...

Page 2

... NP74N04YUG Electrical Characteristics (T Item Zero Gate Voltage Drain Current Gate Leakage Current Gate to Source Threshold Voltage ∗ 1 Forward Transfer Admittance Drain to Source On-state ∗ 1 Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time ...

Page 3

... NP74N04YUG Typical Characteristics (T DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 100 T - Case Temperature - °C C FORWARD BIAS SAFE OPERATING AREA 1000 I D(pulse) 100 Power Dissipation Limited 25°C C Single Pulse 0.1 0 Drain to Source Voltage - V DS 1000 ...

Page 4

... NP74N04YUG DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 250 200 150 100 0 Drain to Source Voltage - V DS GATE TO SOURCE THRESHOLD VOLTAGE vs. CHANNEL TEMPERATURE 4 3.5 3 2.5 2 1.5 1 0.5 0 -100 Channel Temperature - °C ch DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT Pulsed 0 Drain Current - A D R07DS0017EJ0100 Rev ...

Page 5

... NP74N04YUG DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 37 Pulsed -100 0 100 - Channel Temperature - ° SWITCHING CHARACTERISTICS 1000 100 Drain Current - A D SOURCE TO DRAIN DIODE FORWARD VOLTAGE 1000 100 0 Source to Drain Voltage - V F(S-D) R07DS0017EJ0100 Rev ...

Page 6

... NP74N04YUG Package Drawings (Unit: mm) 8-pin HSON (Mass: 0.13 g TYP.) Equivalent Circuit Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred. ...

Page 7

... Revision History Rev. Date Page 1.00 Jul 01, 2010 − All trademarks and registered trademarks are the property of their respective owners. NP74N04YUG Description First Eddition Issued Summary ...

Page 8

All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm ...

Related keywords