HYB514405BJ-50 SIEMENS [Siemens Semiconductor Group], HYB514405BJ-50 Datasheet - Page 5

• Manufacturer Part Number: HYB514405BJ-50
• Description: 1M x 4-Bit Dynamic RAM
• Manufacturer: SIEMENS [Siemens Semiconductor Group]

Absolute Maximum Ratings
Operating temperature range ............................................................................................0 to 70 ˚C
Storage temperature range......................................................................................– 55 to + 150 ˚C
Input/output voltage ........................................................................................................ – 1 to + 7 V
Power Supply voltage ..................................................................................................... – 1 to + 7 V
Data out current (short circuit) ................................................................................................ 50 mA
Note: Stresses above those listed under "Absolute Maximum Ratings" may cause permanent
DC Characteristics
T
Parameter
Input high voltage
Input low voltage
Output high voltage (
Output low voltage (
Input leakage current, any input
(0 V <
Output leakage current
(DO is disabled, 0 <
Average
Standby
(RAS = CAS = WE =
Average
refresh cycles
Average
mode(EDO) operation
Standby
(RAS = CAS = WE =
Semiconductor Group
A
= 0 to 70 ˚C,
damage of the device. Exposure to absolute maximum rating conditions for extended periods
may affect device reliability.
V
in
V
V
V
V
V
CC
CC
CC
< 7, all other input = 0 V)
CC
CC
supply current
supply current
supply current
supply current during RAS-only
supply current during hyper page
V
SS
= 0 V,
I
V
I
OUT
V
V
OUT
OUT
-50 version
-60 version
-70 version
-50 version
-60 version
-70 version
-50 version
-60 version
-70 version
ih
CC
)
= 4.2 mA)
= – 5 mA)
<
– 0.2 V)
V
V
CC
CC
= 5 V
)
10 %,
t
T
= 2 ns
5
Symbol
V
V
V
V
I
I
I
I
I
I
I
I(L)
o(L)
CC1
CC2
CC3
CC4
CC5
ih
il
oh
ol
HYB 514405BJ/BJL-50/-60/-70
min.
2.4
– 1.0
2.4
–
– 10
– 10
–
–
–
–
–
–
–
–
–
–
–
Limit Values
max.
V
0.8
–
0.4
10
10
120
110
100
2
120
110
100
100
90
80
1
200
CC
1M x 4 EDO - DRAM
+ 0.5 V
Unit Test
V
V
V
mA
mA
mA
mA
mA
A
A
A
Condition
1)
1)
1)
1)
1)
1)
2) 3)4)
–
2)4)
2) 3)4)
1)
L-version