K4M563233E-C SAMSUNG [Samsung semiconductor], K4M563233E-C Datasheet - Page 10

• Manufacturer Part Number: K4M563233E-C
• Description: 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
• Manufacturer: SAMSUNG [Samsung semiconductor]

K4M563233E - M(E)E/N/G/C/L/F
A. MODE REGISTER FIELD TABLE TO PROGRAM MODES
Register Programmed with Normal MRS
Normal MRS Mode
Register Programmed with Extended MRS
EMRS for PASR(Partial Array Self Ref.) & DS(Driver Strength)
NOTES:
1. RFU(Reserved for future use) should stay "0" during MRS cycle.
2. If A9 is high during MRS cycle, "Burst Read Single Bit Write" function will be enabled.
Function
Function
A8
A9
Address
0
0
1
1
0
1
Address
BA1
A11~A10/AP
0
0
1
1
Write Burst Length
A7
0
1
0
1
0
Test Mode
BA0
Mode Register Set
0
1
0
1
BA1
Single Bit
Mode Select
Length
"0" Setting for
Normal MRS
Burst
BA0 ~ BA1
Reserved
Reserved
Reserved
Type
Mode Select
BA0
EMRS for Mobile SDRAM
A9
0
Normal MRS
A11 ~ A10/AP
Reserved
Reserved
Mode
A6
Reserved Address
0
0
0
0
1
1
1
1
A11 ~ A10/AP
A8
0
RFU
A5
0
0
1
1
0
0
1
1
CAS Latency
*1
A4
0
1
0
1
0
1
0
1
RFU
A9
A7
*1
0
Reserved
Reserved
Reserved
Reserved
Reserved
Latency
W.B.L
A9
A6
0
0
1
1
1
2
3
*2
A8
A5
0
1
0
1
Driver Strength
A8
Test Mode
BA1 BA0
A3
A4
0
1
0
0
A7
Mode Select
Driver Strength
Burst Type
A7
0
Reserved
Reserved
Sequential
Interleave
A6
Full
Type
1/2
mal MRS
for Nor-
Setting
A6
DS
Mode
A3
0
CAS Latency
A5
A5
A2
0
0
0
0
1
1
1
1
A2
A4
0
0
0
0
1
1
1
1
RFU
A4
A1
0
0
1
1
0
0
1
1
A1
*1
0
0
1
1
0
0
1
1
Full Page Length x32 : 256Mb(512)
A3
Mobile-SDRAM
A0
A3
BT
Burst Length
0
1
0
1
0
1
0
1
A0
0
1
0
1
0
1
0
1
PASR
Reserved
Reserved
Reserved
Full Page
A2
BT=0
A2
1
2
4
8
Burst Length
# of Banks
PASR
February 2004
Reserved
Reserved
Reserved
Reserved
Reserved
A1
4 Banks
2 Banks
1 Bank
A1
Reserved
Reserved
Reserved
Reserved
BT=1
1
2
4
8
A0
A0