MF122 MOTOROLA [Motorola, Inc], MF122 Datasheet - Page 3

• Manufacturer Part Number: MF122
• Description: COMPLEMENTARY SILICON POWER DARLINGTONS
• Manufacturer: MOTOROLA [Motorola, Inc]

Motorola Bipolar Power Transistor Device Data
0.5
0.3
0.2
0.1
10
5
3
2
1
0.05
0.03
0.02
0.01
1
0.5
0.3
0.2
0.1
T J = 150 C
1
0.1
2
V CE , COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 5. Maximum Forward Bias
0.2
CURRENT LIMIT
SECONDARY BREAKDOWN
LIMIT
THERMAL LIMIT @
T C = 25 C (SINGLE PULSE)
3
0.3
Safe Operating Area
5
0.5
T A T C
10
4
3
2
1
1
dc
80
60
40
20
0
SINGLE PULSE
R JC(t) = r(t) R JC
T J(pk) – T C = P (pk) R JC (t)
0
20
2
5 ms
20
3
30
Figure 3. Maximum Power Derating
1 ms
5
40
50
Figure 4. Thermal Response
100 s
T, TEMPERATURE ( C)
10
60
100
T C
T A
20
80
t, TIME (ms)
30
transistor: average junction temperature and second break-
down. Safe operating area curves indicate I C – V CE limits of
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipa-
tion than the curves indicate.
variable depending on conditions. Secondary breakdown
pulse limits are valid for duty cycles to 10% provided T J(pk)
< 150 _ C. T J(pk) may be calculated from the data in Figure 4.
At high case temperatures, thermal limitations will reduce the
power that can be handled to values less than the limitations
imposed by secondary breakdown.
100
There are two limitations on the power handling ability of a
The data of Figure 5 is based on T J(pk) = 150 _ C; T C is
50
120
100
140
200
160
300
500
1K
MJF122 MJF127
2K
3K
5K
3
10K