BGX7100HN/1,115 NXP Semiconductors, BGX7100HN/1,115 Datasheet - Page 10

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BGX7100HN/1,115

Manufacturer Part Number
BGX7100HN/1,115
Description
Modulator / Demodulator IQ MOD 5V 184mA
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BGX7100HN/1,115

Rohs
yes
Package / Case
HVQFN-24
Maximum Operating Temperature
+ 85 C
Minimum Operating Temperature
- 40 C
Modulation Type
Quadrature
Operating Supply Voltage
4.75 V to 5.25 V
Factory Pack Quantity
1500
Supply Current
184 mA
NXP Semiconductors
Table 13.
Modulation source resistance per pin = 90
T
[1]
BGX7100
Product data sheet
Symbol
P
P
IP3
IP2
N
SBS
CF
mb
o
L(1dB)
flr(o)
o
o
range =
MODI = MODI_P  MODI_N and MODQ = MODQ_P  MODQ_N.
Characteristics at 3.650 GHz
40
Parameter
output power
output power at 1 dB gain
compression
output third-order intercept point
output second-order intercept
point
output noise floor
sideband suppression
carrier feedthrough
C to +85
C; P
i(lo)
= 0 dBm; IQ frequency = 5 MHz unless otherwise stated.
All information provided in this document is subject to legal disclaimers.
; POFF_P connected to GND (shutdown disabled); V
Rev. 5 — 3 September 2012
Conditions
1 V (p-p) differential on MODI
and MODQ
IQ frequency 1 = 4.5 MHz;
IQ frequency 2 = 5.5 MHz;
output power per
tone = 10 dBm
IQ frequency 1 = 4.5 MHz;
IQ frequency 2 = 5.5 MHz;
output power per
tone = 10 dBm
no modulation present
modulation at MODI and
MODQ
unadjusted
unadjusted
[1]
; P
[1]
o(RF)
= 10 dBm
Min
-
-
-
-
-
-
-
-
Transmitter IQ modulator
CC
Typ
0.2
11.5
25
60
158
158
53
43
= 5 V;
BGX7100
© NXP B.V. 2012. All rights reserved.
Max
-
-
-
-
-
-
-
-
Unit
dBm
dBm
dBm
dBm
dBm/Hz
dBm/Hz
dBc
dBm
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