23K256-I/P Microchip Technology, 23K256-I/P Datasheet - Page 2

• Manufacturer Part Number: 23K256-I/P
• Description: IC SRAM 256KBIT 20MHZ 8DIP
• Manufacturer: Microchip Technology
• Type: Synchronousr

Specifications of 23K256-I/P

• Memory Size: 256K (32K x 8)
• Package / Case: 8-DIP (0.300", 7.62mm)
• Format - Memory: RAM
• Memory Type: SRAM
• Speed: 20MHz
• Interface: SPI Serial
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Access Time: 25 ns
• Maximum Clock Frequency: 20 MHz
• Supply Voltage (max): 3.6 V
• Supply Voltage (min): 2.7 V
• Maximum Operating Current: 10 mA
• Maximum Operating Temperature: + 85 C
• Minimum Operating Temperature: - 40 C
• Mounting Style: Through Hole
• Number Of Ports: 1
• Operating Supply Voltage: 3.3 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

23X256
1.0
Absolute Maximum Ratings
V
All inputs and outputs w.r.t. V
Storage temperature .................................................................................................................................-65°C to 150°C
Ambient temperature under bias ...............................................................................................................-40°C to 125°C
ESD protection on all pins ...........................................................................................................................................2kV
TABLE 1-1:
DS22100E-page 2
† NOTICE: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the
device. This is a stress rating only and functional operation of the device at those or any other conditions above those
indicated in the operational listings of this specification is not implied. Exposure to maximum rating conditions for an
extended period of time may affect device reliability.
DC CHARACTERISTICS
Param.
D001
D001
D002
D003
D004
D005
D006
D007
D008
D009
D010
D011
Note 1:
CC
No.
.............................................................................................................................................................................4.5V
2:
ELECTRICAL CHARACTERISTICS
V
V
V
V
V
V
I
I
I
I
C
V
LI
LO
CC
CCS
OL
OH
CC
CC
IH
IL
DR
INT
This parameter is periodically sampled and not 100% tested. Typical measurements taken at room
temperature (25°C).
This is the limit to which V
sampled and not 100% tested.
Sym.
Read
DC CHARACTERISTICS
Supply voltage
Supply voltage
High-level input
voltage
Low-level input
voltage
Low-level output
voltage
High-level output
voltage
Input leakage
current
Output leakage
current
Operating current
Standby current
Input capacitance
RAM data retention
voltage
Characteristic
(2)
SS
......................................................................................................... -0.3V to V
(†)
DD
can be lowered without losing RAM data. This parameter is periodically
Industrial (I):
Automotive (E): T
V
.7 V
CC
Min.
-0.3
1.5
2.7
—
—
—
—
—
—
—
—
—
—
-0.5
CC
Typ
0.2
1.2
—
—
—
—
—
—
—
—
—
—
—
1
5
(1)
T
A
A
0.2xV
= -40°C to +85°C
= -40°C to +125°C
Max.
1.95
+0.3
±0.5
±0.5
V
3.6
0.2
10
10
—
—
3
6
1
4
7
CC
CC
Units
mA
mA
mA
A
A
A
A
A
pF
V
V
V
V
V
V
V
23A256 (I-Temp)
23K256 (I,E-Temp)
I
I
CS = V
CS = V
F
F
F
CS = V
or V
CS = V
or V
CS = V
or V
V
(Note
OL
OH
CLK
CLK
CLK
CC
= 1 mA
= -400 A
SS
SS
SS
= 0V, f = 1 MHz, Ta = 25°C
= 1 MHz; SO = O
= 10 MHz; SO = O
= 20 MHz; SO = O
1)
 2010 Microchip Technology Inc.
CC
CC
CC
CC
CC
@ 125°C
Test Conditions
, V
, V
= 1.8V, Inputs tied to V
= 3.6V, Inputs tied to V
= 3.6V, Inputs tied to V
OUT
IN
= V
= V
SS OR
SS OR
V
CC
V
CC
CC
+0.3V
CC
CC
CC