VN920B5HTR-E STMicroelectronics, VN920B5HTR-E Datasheet
VN920B5HTR-E
Specifications of VN920B5HTR-E
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VN920B5HTR-E Summary of contents
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... V OUT Description The VN920B5 monolithic device designed in STMicroelectronics™ VIPower™ M0-3 technology. The VN920B5-E is intended for driving any type of load with one side connected to ground. The active V device against low energy spikes (see ISO7637 transient compatibility table). Active current limitation combined with thermal shutdown and automatic restart protect the device against overload ...
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Contents Contents 1 Block diagram and pin description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 2 Electrical ...
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VN920B5-E List of tables Table 1. Device summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...
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List of figures List of figures Figure 1. Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...
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VN920B5-E 1 Block diagram and pin description Figure 1. Block diagram GND INPUT Figure 2. Configuration diagram (top view) Table 2. Suggested connections for unused and not connected pins Connection / pin Floating To ground OVERVOLTAGE V CC DETECTION CLAMP ...
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... These are stress ratings only and operation of the device at these or any other conditions above those indicated in the operating sections of this specification is not implied. Exposure to Absolute maximum rating conditions for extended periods may affect device reliability. Refer also to the STMicroelectronics sure program and other relevant quality document. Table 3. ...
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VN920B5-E Table 3. Absolute maximum ratings (continued) Symbol P Power dissipation T tot T Junction operating temperature j T Case operating temperature c T Storage temperature stg 2.2 Thermal data Table 4. Thermal data Symbol R Thermal resistance junction-case thj-case ...
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Electrical specifications 2.3 Electrical characteristics Values specified in this section are for 8 V < V otherwise stated. Table 5. Power Symbol Parameter V Operating supply voltage CC V Undervoltage shutdown USD V Overvoltage shutdown OV R On-state resistance ON ...
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VN920B5-E Table 7. Logic inputs Symbol V Input low level voltage IL I Low level input current IL V Input high-level voltage IH I High-level input current IH V Input hysteresis voltage I(hyst) V Input clamp voltage ICL Current sense ...
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Electrical specifications Table Symbol V Forward on voltage F Table 10. Protections Symbol T Shutdown temperature TSD T Reset temperature R T Thermal hysteresis hyst I Current limitation lim Turn-off output clamp V demag voltage Output voltage ...
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VN920B5-E Table 12. Electrical transient requirements ISO T/R 7637/1 Test pulse 26.5V 1. All functions of the device are performed as designed after exposure to disturbance. 2. One or more functions of the ...
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Electrical specifications Figure 5. I OUT I /I OUT SENSE 6500 6500 6000 6000 5500 5500 5000 5000 4500 4500 4000 4000 3500 3500 3000 3000 0 2 12/26 /I versus I SENSE OUT max.Tj=25...150°C min.Tj=25...150° ...
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VN920B5-E Figure 6. Waveforms INPUT LOAD CURRENT SENSE V CC INPUT LOAD CURRENT SENSE V CC INPUT LOAD CURRENT SENSE INPUT LOAD CURRENT LOAD VOLTAGE SENSE INPUT LOAD VOLTAGE LOAD CURRENT SENSE T j INPUT LOAD CURRENT SENSE NORMAL OPERATION ...
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Electrical specifications 2.4 Electrical characteristics curves Figure 7. Off-state output current IL(off1) (uA -50 - (°C) Figure 9. Input clamp voltage Vicl (V) 10 9.5 ...
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VN920B5-E Figure 13 LIM case Ilim (A) 100 90 Vcc=13V -50 - (°C) Figure 15. Input high-level Vih (V) 3.6 3.4 3.2 3 ...
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Application information 3 Application information Figure 19. Application schematic + μC 3.1 GND protection network against reverse battery 3.1.1 Solution 1: resistor in the ground line (R This can be used with any type of load. The following ...
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VN920B5-E 3.1.2 Solution 2: diode (D A resistor (R GND inductive load. This small signal diode can be safely shared amongst several different HSDs. Also in this case, the presence of the ground network produces a shift (≈600mV) in the ...
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Application information 2 3.4 P PAK maximum demagnetization energy (V 2 Figure 20. P PAK maximum turn-off current versus inductance (A) 100 150 °C single pulse jstart 100 ...
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VN920B5-E 4 Package and PCB thermal data 2 4.1 P PAK thermal data 2 Figure 21. P PAK PC board 1. Layout condition thickness = 35 μm , Copper areas: 0. Figure 22. P PAK ...
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Package and PCB thermal data 2 Figure 23. P PAK thermal impedance junction ambient single pulse ZT H (°C/W) 1000 100 10 1 0.1 0.01 0.0001 0.001 Equation 1: pulse calculation formula ⋅ δ THδ TH where ...
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VN920B5-E 2 Table 13. P PAK thermal parameter Area/island (cm R1 (°C/W) R2 (°C/W) R3 (°C/W) R4 (°C/W) R5 (°C/W) R6 (°C/W) C1 (W·s/°C) C2 (W·s/°C) C3 (W·s/°C) C4 (W·s/°C) C5 (W·s/°C) C6 (W·s/° 0.97 0.02 0.1 0.22 ...
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Package and packing information 5 Package and packing information ® 5.1 ECOPACK In order to meet environmental requirements, ST offers these devices in different grades of ® ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions ...
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VN920B5-E 2 Table 14. P PAK mechanical data Dim Package weight Package and packing information mm Min. Typ. 4.30 2.40 0.03 0.80 ...
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Package and packing information 2 5.3 P PAK packing information 2 Figure 26. P PAK tube shipment (no suffix Figure 27. P PAK tape and reel (suffix “TR”) TAPE DIMENSIONS According to Electronic Industries Association (EIA) Standard 481 ...
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VN920B5-E 6 Revision history Table 15. Document revision history Date 19-Jul-2010 Revision 1 Initial release. Doc ID 17608 Rev 1 Revision history Changes 25/26 ...
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... Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. ...