VN800PSTR-E STMicroelectronics, VN800PSTR-E Datasheet - Page 15

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VN800PSTR-E

Manufacturer Part Number
VN800PSTR-E
Description
Power Switch ICs - Power Distribution VIPower High Side 135mOhm 0.7A 36V
Manufacturer
STMicroelectronics
Datasheet

Specifications of VN800PSTR-E

Product Category
Power Switch ICs - Power Distribution
Rohs
yes
Operating Supply Voltage
5.5 V to 36 V

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VN800PS-E
3
Figure 9.
3.1
3.1.1
Application information
Application schematic
GND protection network against reverse battery
Solution 1: resistor in the ground line (R
This can be used with any type of load.
The following is an indication on how to dimension the R
1) R
2) R
where -I
maximum rating section of the device’s datasheet.
Power dissipation in R
P
This resistor can be shared amongst several different HSD. Please note that the value of this
resistor should be calculated with formula (1) where I
maximum on-state currents of the different devices.
Please note that if the microprocessor ground is not common with the device ground then
the R
values. This shift varies depending on many devices are on in the case of several high side
drivers sharing the same R
D
= (-V
GND
GND
GND
CC
GND
≤ 600 mV / (I
≥ (-V
produces a shift (I
)
2
/R
is the DC reverse ground pin current and can be found in the absolute
CC
GND
) / (-I
GND
S(on)max
GND
)
(when V
GND
S(on)max
)
Doc ID 15610 Rev 3
.
CC
* R
< 0: during reverse battery situations) is:
GND
) in the input thresholds and the status output
GND
S(on)max
GND
only)
resistor.
becomes the sum of the
Application information
15/27

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