AT28C010E-12TC Atmel, AT28C010E-12TC Datasheet - Page 2

• Manufacturer Part Number: AT28C010E-12TC
• Description: IC EEPROM 1MBIT 120NS 32TSOP
• Manufacturer: Atmel

Specifications of AT28C010E-12TC

• Format - Memory: EEPROMs - Parallel
• Memory Type: EEPROM
• Memory Size: 1M (128K x 8)
• Speed: 120ns
• Interface: Parallel
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 32-TSOP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: AT28C010E12TC; Q5271698

The AT28C010 is accessed like a Static RAM for the read
or write cycle without the need for external components.
The device contains a 128-byte page register to allow writ-
ing of up to 128 bytes simultaneously. During a write cycle,
the address and 1 to 128 bytes of data are internally
latched, freeing the address and data bus for other opera-
tions. Following the initiation of a write cycle, the device will
automatically write the latched data using an internal con-
trol timer. The end of a write cycle can be detected by
DATA POLLING of I/O
been detected a new access for a read or write can begin.
Block Diagram
Absolute Maximum Ratings*
2
Temperature Under Bias................................ -55°C to +125°C
Storage Temperature ..................................... -65°C to +150°C
All Input Voltages
(including NC Pins)
with Respect to Ground ...................................-0.6V to +6.25V
All Output Voltages
with Respect to Ground .............................-0.6V to V
Voltage on OE and A9
with Respect to Ground ...................................-0.6V to +13.5V
AT28C010 Com/Ind
7
. Once the end of a write cycle has
CC
+ 0.6V
Atmel’s 28C010 has additional features to ensure high
quality and manufacturability. The device utilizes internal
error correction for extended endurance and improved data
retention characteristics. An optional software data protec-
tion mechanism is available to guard against inadvertent
writes. The device also includes an extra 128 bytes of
EEPROM for device identification or tracking.
*NOTICE:
Stresses beyond those listed under “Absolute
Maximum Ratings” may cause permanent dam-
age to the device. This is a stress rating only and
functional operation of the device at these or any
other conditions beyond those indicated in the
operational sections of this specification is not
implied. Exposure to absolute maximum rating
conditions for extended periods may affect
device reliability