71V416S10PHG IDT, 71V416S10PHG Datasheet

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71V416S10PHG

Manufacturer Part Number
71V416S10PHG
Description
SRAM 256Kx16 ASYNCHRONOUS 3.3V CMOS SRAM
Manufacturer
IDT
Datasheet

Specifications of 71V416S10PHG

Rohs
yes
Memory Size
4 Mbit
Organization
256 K x 16
Access Time
10 ns
Supply Voltage - Max
3.6 V
Supply Voltage - Min
3 V
Maximum Operating Current
200 mA
Maximum Operating Temperature
+ 70 C
Minimum Operating Temperature
0 C
Mounting Style
SMD/SMT
Package / Case
TSOP-44
Part # Aliases
IDT71V416S10PHG
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Features
Functional Block Diagram
©2013 Integrated Device Technology, Inc.
256K x 16 advanced high-speed CMOS Static RAM
JEDEC Center Power / GND pinout for reduced noise.
Equal access and cycle times
– Commercial and Industrial: 10/12/15ns
One Chip Select plus one Output Enable pin
Bidirectional data inputs and outputs directly
LVTTL-compatible
Low power consumption via chip deselect
Upper and Lower Byte Enable Pins
Single 3.3V power supply
Available in 44-pin, 400 mil plastic SOJ package and a 44-
pin, 400 mil TSOP Type II package and a 48 ball grid array,
9mm x 9mm package.
A0 - A17
BHE
BLE
WE
OE
CS
Address
Buffers
Write
Enable
Buffer
Output
Enable
Buffer
Chip
Select
Buffer
Byte
Enable
Buffers
3.3V CMOS Static RAM
4 Meg (256K x 16-Bit)
4,194,304-bit
Row / Column
Decoders
Memory
Array
1
Description
as 256K x 16. It is fabricated using high-perfomance, high-reliability CMOS
technology. This state-of-the-art technology, combined with innovative
circuit design techniques, provides a cost-effective solution for high-speed
memory needs.
5ns, with address access times as fast as 10ns. All bidirectional inputs and
outputs of the IDT71V416 are LVTTL-compatible and operation is from a
single 3.3V supply. Fully static asynchronous circuitry is used, requiring
no clocks or refresh for operation.
44-pin, 400 mil TSOP Type II package and a 48 ball grid array, 9mm x
9mm package.
16
The IDT71V416 is a 4,194,304-bit high-speed Static RAM organized
The IDT71V416 has an output enable pin which operates as fast as
The IDT71V416 is packaged in a 44-pin, 400 mil Plastic SOJ and a
Drivers
Sense
Amps
Write
and
8
8
8
8
Output
Output
Buffer
Buffer
Buffer
Buffer
Write
Write
High
Byte
High
Byte
Byte
Byte
Low
Low
8
8
8
8
FEBRUARY 2013
IDT71V416S
IDT71V416L
3624 drw 01
I/O 15
I/O 8
I/O 7
I/O 0
DSC-3624/10

Related parts for 71V416S10PHG

71V416S10PHG Summary of contents

Page 1

... IDT71V416 are LVTTL-compatible and operation is from a single 3.3V supply. Fully static asynchronous circuitry is used, requiring no clocks or refresh for operation. The IDT71V416 is packaged in a 44-pin, 400 mil Plastic SOJ and a 44-pin, 400 mil TSOP Type II package and a 48 ball grid array, 9mm x 9mm package. ...

Page 2

... IDT71V416S, IDT71V416L, 3.3V CMOS Static RAM 4 Meg (256K x 16-Bit) Pin Configurations - SOJ/TSOP SO44 SO44 *Pin 28 can either connected to Vss ...

Page 3

... Supply Voltage DD V Ground SS V Input High Voltage IH V Input Low Voltage IL NOTES: 1. VIH (max.) = VDD+2V for pulse width less than 5ns, once per cycle. 2. VIL (min.) = –2V for pulse width less than 5ns, once per cycle. I/O I/O I/O I/O BHE High-Z High-Z ...

Page 4

... IDT71V416S, IDT71V416L, 3.3V CMOS Static RAM 4 Meg (256K x 16-Bit) DC Electrical Characteristics (V = Min. to Max., Commercial and Industrial Temperature Ranges) DD Symbol Parameter |I | Input Leakage Current Output Leakage Current LO V Output Low Voltage OL V Output High Voltage OH DC Electrical Characteristics (V = Min. to Max 0.2V ...

Page 5

... IDT71V416S, IDT71V416L, 3.3V CMOS Static RAM 4 Meg (256K x 16-Bit) AC Electrical Characteristics (V = Min. to Max., Commercial and Industrial Temperature Ranges) DD Symbol Parameter READ CYCLE t Read Cycle Time RC t Address Access Time AA t Chip Select Access Time ACS (1) t Chip Select Low to Output in Low-Z CLZ ...

Page 6

... IDT71V416S, IDT71V416L, 3.3V CMOS Static RAM 4 Meg (256K x 16-Bit) Timing Waveform of Read Cycle No. 2 ADDRESS OE CS BHE, BLE DATA OUT NOTES HIGH for Read Cycle. 2. Address must be valid prior to or coincident with the later of CS, BHE, or BLE transition LOW; otherwise t 3. Transition is measured ±200mV from steady state. ...

Page 7

... IDT71V416S, IDT71V416L, 3.3V CMOS Static RAM 4 Meg (256K x 16-Bit) Timing Waveform of Write Cycle No. 2 (CS Controlled Timing) ADDRESS BHE, BLE WE DATA OUT DATA IN Timing Waveform of Write Cycle No. 3 (BHE, BLE Controlled Timing) ADDRESS BHE, BLE WE DATA OUT DATA IN NOTES write occurs during the overlap of a LOW CS, LOW BHE or BLE, and a LOW WE. ...

Page 8

... IDT71V416S, IDT71V416L, 3.3V CMOS Static RAM 4 Meg (256K x 16-Bit) Ordering Information 71V416 X XX Device Power Speed Package Type X XXX X Process/ Temperature Range 6.42 8 Commercial and Industrial Temperature Ranges X Blank Tube or Tray 8 Tape and Reel Blank Commercial (0°C to +70°C) I Industrial (-40°C to +85°C) ...

Page 9

... Pg. 8 Removed die revision information from the Ordering Information CORPORATE HEADQUARTERS 6024 Silver Creek Valley Road San Jose, CA 95138 The IDT logo is a registered trademark of Integrated Device Technology, Inc. Commercial and Industrial Temperature Ranges on Write Cycle No. 1 diagram CW for SALES: 800-345-7015 or ...

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