IDT71V124SA10YGI8 IDT, Integrated Device Technology Inc, IDT71V124SA10YGI8 Datasheet - Page 6

• Manufacturer Part Number: IDT71V124SA10YGI8
• Description: IC SRAM 1MBIT 10NS 32SOJ
• Manufacturer: IDT, Integrated Device Technology Inc

Specifications of IDT71V124SA10YGI8

• Format - Memory: RAM
• Memory Type: SRAM
• Memory Size: 1M (128K x 8)
• Speed: 10ns
• Interface: Parallel
• Voltage - Supply: 3.15 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 32-SOJ
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 71V124SA10YGI8; 800-1457-2

Timing Waveform of Write Cycle No. 1 (WE Controlled Timing)
Timing Waveform of Write Cycle No. 2 (CS Controlled Timing)
NOTES:
1. A write occurs during the overlap of a LOW CS and a LOW WE.
2. OE is continuously HIGH. During a WE controlled write cycle with OE LOW, t
3. During this period, I/O pins are in the output state, and input signals must not be applied.
4. If the CS LOW transition occurs simultaneously with or after the WE LOW transition, the outputs remain in a high impedance state. CS must be active during the t
5. Transition is measured ±200mV from steady state.
ADDRESS
IDT71V124SA, 3.3V CMOS Static RAM
1 Meg (128K x 8-Bit) Center Power & Ground Pinout
ADDRESS
placed on the bus for the required t
DATA
DATA
DATA
OUT
WE
CS
WE
CS
IN
IN
DW
. If OE is HIGH during a WE controlled write cycle, this requirement does not apply and the minimum write pulse is the specified t
t
t
AS
AS
(3)
t
WHZ
(5)
t
t
AW
AW
WP
t
t
t
t
WC
WP
CW
WC
must be greater than or equal to t
(2)
HIGH IMPEDANCE
6
t
t
DATA
DW
DW
DATA
IN
VALID
IN
Commercial and Industrial Temperature Ranges
VALID
WHZ
t
+ t
DH
t
t
t
WR
WR
OW
DW
(3)
to allow the I/O drivers to turn off and data to be
(5)
t
DH
(3)
(1, 4)
t
(1,2,4)
CHZ
3873 drw 08
(5)
3873 drw 07
CW
write period.
WP
.
.
.