CY7C1354C-166AXC Cypress Semiconductor Corp, CY7C1354C-166AXC Datasheet - Page 23

• Manufacturer Part Number: CY7C1354C-166AXC
• Description: IC SRAM 9MBIT 166MHZ 100LQFP
• Manufacturer: Cypress Semiconductor Corp
• Type: Synchronousr

Specifications of CY7C1354C-166AXC

• Memory Size: 9M (256K x 36)
• Package / Case: 100-LQFP
• Format - Memory: RAM
• Memory Type: SRAM - Synchronous
• Speed: 166MHz
• Interface: Parallel
• Voltage - Supply: 3.135 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C
• Access Time: 3.5 ns
• Maximum Clock Frequency: 166 MHz
• Supply Voltage (max): 3.6 V
• Supply Voltage (min): 3.135 V
• Maximum Operating Current: 180 mA
• Maximum Operating Temperature: + 70 C
• Minimum Operating Temperature: 0 C
• Mounting Style: SMD/SMT
• Number Of Ports: 4
• Operating Supply Voltage: 3.3 V
• Memory Configuration: 512K X 18 / 256K X 36
• Clock Frequency: 166MHz
• Supply Voltage Range: 3.135V To 3.6V
• Memory Case Style: TQFP
• No. Of Pins: 100
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 428-2159; CY7C1354C-166AXC

Switching Waveforms
Notes
Document Number: 38-05538 Rev. *L
28. For this waveform ZZ is tied low.
29. When CE is LOW, CE
30. Order of the Burst sequence is determined by the status of the MODE (0 = Linear, 1 = Interleaved). Burst operations are optional.
In-Out (DQ)
ADDRESS
ADV/LD
Data
BW
CEN
CLK
WE
OE
CE
x
t
t
t
CENS
AS
CES
WRITE
D(A1)
A1
1
1
is LOW, CE
t
t
CENH
t
AH
CEH
WRITE
D(A2)
2
2
is HIGH and CE
A2
t
CH
t CYC
t
t
DS
CL
D(A2+1)
BURST
WRITE
D(A1)
3
Figure 5. Read/Write Timing
t
3
DH
is LOW. When CE is HIGH, CE
DON’T CARE
D(A2)
READ
Q(A3)
A3
4
D(A2+1)
READ
Q(A4)
A4
5
t
t
CO
CLZ
1
UNDEFINED
is HIGH or CE
Q(A4+1)
BURST
READ
[28, 29, 30]
Q(A3)
6
t
DOH
t
OEHZ
2
WRITE
is LOW or CE
D(A5)
Q(A4)
A5
7
CY7C1354C, CY7C1356C
t
OEV
t
OELZ
3
Q(A6)
Q(A4+1)
READ
is HIGH.
A6
8
t
t
DOH
CHZ
WRITE
D(A7)
9
D(A5)
A7
DESELECT
Page 23 of 32
10
Q(A6)
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