CY7C1362C-200AXC Cypress Semiconductor Corp, CY7C1362C-200AXC Datasheet - Page 22

• Manufacturer Part Number: CY7C1362C-200AXC
• Description: IC SRAM 9MBIT 200MHZ 100LQFP
• Manufacturer: Cypress Semiconductor Corp
• Type: Synchronousr

Specifications of CY7C1362C-200AXC

• Memory Size: 9M (512K x 18)
• Package / Case: 100-LQFP
• Format - Memory: RAM
• Memory Type: SRAM - Synchronous
• Speed: 200MHz
• Interface: Parallel
• Voltage - Supply: 3.135 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C
• Access Time: 3 ns
• Maximum Clock Frequency: 200 MHz
• Supply Voltage (max): 3.6 V
• Supply Voltage (min): 3.135 V
• Maximum Operating Current: 220 mA
• Maximum Operating Temperature: + 70 C
• Minimum Operating Temperature: 0 C
• Mounting Style: SMD/SMT
• Number Of Ports: 2
• Operating Supply Voltage: 3.3 V
• Density: 9Mb
• Access Time (max): 3ns
• Sync/async: Synchronous
• Architecture: SDR
• Clock Freq (max): 200MHz
• Operating Supply Voltage (typ): 3.3V
• Address Bus: 19b
• Package Type: TQFP
• Operating Temp Range: 0C to 70C
• Supply Current: 220mA
• Operating Supply Voltage (min): 3.135V
• Operating Supply Voltage (max): 3.6V
• Operating Temperature Classification: Commercial
• Mounting: Surface Mount
• Pin Count: 100
• Word Size: 18b
• Number Of Words: 512K
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 428-2129; CY7C1362C-200AXC

Electrical Characteristics
Over the Operating Range
Capacitance
Thermal Resistance
Document Number: 38-05540 Rev. *K
Parameter
I
I
I
I
I
C
C
C
Θ
Θ
Note
Parameter
DD
SB1
SB2
SB3
SB4
3.3 V I/O Test Load
20. Tested initially and after any design or process change that may affect these parameters.
IN
CLK
I/O
JA
JC
2.5 V I/O Test Load
OUTPUT
OUTPUT
Parameter
V
current
Automatic CE
power-down
current—TTL inputs
Automatic CE
power-down
current—CMOS inputs
Automatic CE
power-down
current—CMOS inputs
Automatic CE
power-down
current—TTL inputs
Thermal resistance
(junction to ambient)
Thermal resistance
(junction to case)
DD
Z
Z
operating supply
0
0
[20]
Input capacitance
Clock input capacitance
Input/output capacitance
Description
= 50 Ω
= 50 Ω
Description
(a)
(a)
V
V
Description
[18, 19]
T
T
= 1.25 V
[20]
= 1.5 V
R
R
L
L
= 50 Ω
= 50 Ω
(continued)
Test conditions follow standard test
methods and procedures for
measuring thermal impedance,
according to EIA/JESD51.
V
f = f
V
V
f = f
V
V
f = 0
V
V
f = f
V
V
OUTPUT
OUTPUT
DD
DD
IN
DD
IN
DD
IN
DD
IN
3.3 V
2.5 V
INCLUDING
INCLUDING
MAX
≥ V
MAX
≤ 0.3 V or V
≤ 0.3 V or V
MAX
≥ V
= Max, I
= Max, device deselected,
= Max, device deselected,
= Max, device deselected, or
= Max, device deselected,
Figure 5. AC Test Loads and Waveforms
JIG AND
JIG AND
IH
IH
SCOPE
SCOPE
= 1/t
= 1/t
= 1/t
Test Conditions
or V
or V
T
5 pF
5 pF
OUT
CYC
CYC
CYC
A
IN
IN
Test Conditions
= 25 °C, f = 1 MHz,
IN
IN
V
≤ V
≤ V
V
= 0 mA,
DDQ
> V
> V
DD
Test Conditions
IL
IL
(b)
(b)
DDQ
, f = 0
R = 317 Ω
R = 1667 Ω
= 3.3 V
DDQ
= 2.5 V
– 0.3 V,
– 0.3 V
R = 351 Ω
R =1538 Ω
All speeds
All speeds
4 ns cycle, 250 MHz
5 ns cycle, 200 MHz
6 ns cycle, 166 MHz
4 ns cycle, 250 MHz
5 ns cycle, 200 MHz
6 ns cycle, 166 MHz
4 ns cycle, 250 MHz
5 ns cycle, 200 MHz
6 ns cycle, 166 MHz
100 TQFP
V
Package
GND
GND
100 TQFP
V
DDQ
29.41
6.13
DDQ
Max
≤ 1 ns
≤ 1 ns
5
5
5
10%
10%
CY7C1360C, CY7C1362C
119 BGA
Package
ALL INPUT PULSES
ALL INPUT PULSES
119 BGA
34.1
14.0
Max
90%
90%
5
5
7
Min
–
–
–
–
–
–
–
–
–
–
–
(c)
(c)
165 FBGA
Package
165 FBGA
16.8
3
Max
5
5
7
Max
250
220
180
130
120
110
120
110
100
90%
90%
40
40
10%
10%
Page 22 of 34
≤ 1 ns
≤ 1 ns
°C/W
°C/W
Unit
Unit
pF
pF
pF
Unit
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
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