M48Z35Y-70PC1 STMicroelectronics, M48Z35Y-70PC1 Datasheet

IC NVSRAM 256KBIT 70NS 28DIP

M48Z35Y-70PC1

Manufacturer Part Number
M48Z35Y-70PC1
Description
IC NVSRAM 256KBIT 70NS 28DIP
Manufacturer
STMicroelectronics
Datasheets

Specifications of M48Z35Y-70PC1

Format - Memory
RAM
Memory Type
NVSRAM (Non-Volatile SRAM)
Memory Size
256K (32K x 8)
Speed
70ns
Interface
Parallel
Voltage - Supply
4.5 V ~ 5.5 V
Operating Temperature
0°C ~ 70°C
Package / Case
28-DIP Module (600 mil), 28-EDIP
Data Bus Width
8 bit
Organization
32 Kb x 8
Interface Type
Parallel
Access Time
70 ns
Supply Voltage (max)
5.5 V
Supply Voltage (min)
4.5 V
Operating Current
50 mA
Maximum Operating Temperature
70 C
Minimum Operating Temperature
0 C
Mounting Style
Through Hole
Capacitance, Input
10 pF
Capacitance, Output
10 pF
Current, Input, Leakage
±1 μA
Current, Operating
50 mA
Current, Output, Leakage
±5
Data Retention
10 yrs.
Density
256K
Package Type
PCDIP28
Power Dissipation
1 W
Temperature, Operating
0 to +70 °C
Time, Access
70 ns
Time, Fall
≤5 ns
Time, Rise
≤5 ns
Voltage, Input, High
4.8 to 5.8 V
Voltage, Input, Low
0.8 V
Voltage, Output, High
2.4 V
Voltage, Output, Low
0.4 V
Voltage, Supply
4.5 to 5.5 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-2885-5

Available stocks

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Quantity
Price
Part Number:
M48Z35Y-70PC1
Manufacturer:
ST
Quantity:
50
Part Number:
M48Z35Y-70PC1
Manufacturer:
ST
Quantity:
50
Part Number:
M48Z35Y-70PC1
Manufacturer:
ST
Quantity:
50
Part Number:
M48Z35Y-70PC1
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ST
Quantity:
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Part Number:
M48Z35Y-70PC1
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0
Part Number:
M48Z35Y-70PC1
Manufacturer:
ST
Quantity:
20 000
Features
Integrated, ultra low power SRAM, power-fail
control circuit, and battery
READ cycle time equals WRITE cycle time
Automatic power-fail chip deselect and WRITE
protection
WRITE protect voltages:
(V
– M48Z35: V
– M48Z35Y: 4.5 to 5.5V
Self-contained battery in the CAPHAT™ DIP
package
Packaging includes a 28-lead SOIC and
SNAPHAT
Pin and function compatible with JEDEC
standard 32K x 8 SRAMs
SOIC package provides direct connection for a
SNAPHAT top which contains the battery
RoHS compliant
PFD
4.5V
4.2v
Lead-free second level interconnect
= Power-fail Deselect Voltage)
V
V
®
pfd
PFD
top (to be ordered separately)
CC
4.5v
= 4.75 to 5.5V
4.75V
256Kbit (32Kbit x 8) ZEROPOWER
28
28
Battery CAPHAT
SNAPHAT (SH)
PCDIP28 (PC)
SOH28 (MH)
1
Battery
1
M48Z35Y
M48Z35
®
SRAM
1/23

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M48Z35Y-70PC1 Summary of contents

Page 1

... WRITE protect voltages Power-fail Deselect Voltage) PFD – M48Z35 4.75 to 5.5V CC 4.5V V 4.75V PFD – M48Z35Y: 4.5 to 5.5V 4.2v V 4.5v pfd ■ Self-contained battery in the CAPHAT™ DIP package ■ Packaging includes a 28-lead SOIC and ® SNAPHAT top (to be ordered separately) ■ ...

Page 2

... The SOIC and battery packages are shipped separately in plastic anti-static tubes or in Tape & Reel form. For the 28-lead SOIC, the battery package (i.e. SNAPHAT) part number is “M4Z28- BR00SH1.” Figure 1. Logic diagram ® RAM is a 32K x 8, non-volatile static RAM that integrates A0-A14 W M48Z35 M48Z35Y DQ0-DQ7 AI01616D 5/23 ...

Page 3

Figure 5. Read mode AC waveforms A0-A14 E G DQ0-DQ7 Note: WRITE Enable (W) = High. Table 3. Read mode AC characteristics Symbol t READ cycle time AVAV (2) t Address valid to output valid AVQV (2) t Chip enable ...

Page 4

... A power failure during a WRITE cycle may corrupt data at the currently addressed location, but does not jeopardize the rest of the RAM's content. At voltages below V user can be assured the memory will write protected state, provided the V is not less than t . The M48Z35/Y may respond to transient noise spikes on V ...

Page 5

... V = 4.75 to 5.5V or 4.5 to 5.5V (except where noted may result in deselection/write protection not occurring until 200µs after F may cause corruption of RAM data. FB (1) Min M48Z35 4.5 M48Z35Y 4.2 M48Z35 70° 4.75 to 5.5V or 4.5 to 5.5V (except where noted tRB trec ...

Page 6

... These are stress ratings only and operation of the device at these or any other conditions above those indicated in the Operating sections of this specification is not implied. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability. Refer also to the STMicroelectronics SURE Program and other relevant quality documents. Table 7. ...

Page 7

... Effective capacitance measured with power supply at 5V. Sampled only, not 100% tested. 2. Outputs deselected 25°C. conditions. Designers should check that the operating Parameter ) ) 645 DEVICE UNDER TEST 100pF or 5pF C L includes JIG capacitance (1)(2) Parameter Min Table 8: M48Z35 M48Z35Y 4.75 to 5.5V 4 100 100 1.5 1.5 1.75V AI03211 Max Unit Unit V ° ...

Page 8

Table 10. DC characteristics Symbol Parameter (2) I Input leakage current LI (2) I Output leakage current LO I Supply current CC I Supply current (standby) TTL CC1 I Supply current (standby) CMOS CC2 V Input low voltage IL V ...

Page 9

Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second Level Interconnect is marked on the package and on the inner ...

Page 10

Part numbering Table 15. Ordering information scheme Example: Device type M48Z Supply voltage and write protect voltage ( 4.75 to 5.5V 35Y = V = 4.5 to 5.5V Speed –70 = ...

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