CY7C1471BV33-117AXC Cypress Semiconductor Corp, CY7C1471BV33-117AXC Datasheet

IC SRAM 72MBIT 117MHZ 100LQFP

CY7C1471BV33-117AXC

Manufacturer Part Number
CY7C1471BV33-117AXC
Description
IC SRAM 72MBIT 117MHZ 100LQFP
Manufacturer
Cypress Semiconductor Corp
Datasheet

Specifications of CY7C1471BV33-117AXC

Format - Memory
RAM
Memory Type
SRAM - Synchronous
Memory Size
72M (2M x 36)
Speed
117MHz
Interface
Parallel
Voltage - Supply
3.135 V ~ 3.6 V
Operating Temperature
0°C ~ 70°C
Package / Case
100-LQFP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
CY7C1471BV33-117AXC
Manufacturer:
Cypress Semiconductor Corp
Quantity:
10 000
Features
Selection Guide
Cypress Semiconductor Corporation
Document Number: 001-15029 Rev. *D
Maximum Access Time
Maximum Operating Current
Maximum CMOS Standby Current
No Bus Latency™ (NoBL™) architecture eliminates dead
cycles between write and read cycles
Supports up to 133 MHz bus operations with zero wait states
Data is transferred on every clock
Pin compatible and functionally equivalent to ZBT™ devices
Internally self timed output buffer control to eliminate the need
to use OE
Registered inputs for flow through operation
Byte Write capability
3.3V/2.5V IO supply (V
Fast clock-to-output times
Clock Enable (CEN) pin to enable clock and suspend operation
Synchronous self-timed writes
Asynchronous Output Enable (OE)
CY7C1471BV33, CY7C1473BV33 available in
JEDEC-standard Pb-free 100-pin TQFP, Pb-free and
non-Pb-free 165-Ball FBGA package. CY7C1475BV33
available in Pb-free and non-Pb-free 209-Ball FBGA package
Three Chip Enables (CE
expansion
Automatic power down feature available using ZZ mode or CE
deselect
IEEE 1149.1 JTAG Boundary Scan compatible
Burst Capability—linear or interleaved burst order
Low standby power
6.5 ns (for 133 MHz device)
DDQ
1
Description
, CE
)
2
, CE
3
) for simple depth
198 Champion Court
72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through
Functional Description
The CY7C1471BV33, CY7C1473BV33, and CY7C1475BV33
are 3.3V, 2M x 36/4M x 18/1M x 72 synchronous flow through
burst SRAMs designed specifically to support unlimited true
back-to-back read or write operations without the insertion of
wait states. The CY7C1471BV33, CY7C1473BV33, and
CY7C1475BV33 are equipped with the advanced No Bus
Latency (NoBL) logic. NoBL™ is required to enable consecutive
read or write operations with data being transferred on every
clock cycle. This feature dramatically improves the throughput of
data through the SRAM, especially in systems that require
frequent write-read transitions.
All synchronous inputs pass through input registers controlled by
the rising edge of the clock. The clock input is qualified by the
Clock Enable (CEN) signal, which when deasserted suspends
operation and extends the previous clock cycle. Maximum
access delay from the clock rise is 6.5 ns (133 MHz device).
Write operations are controlled by two or four Byte Write Select
(BW
with on-chip synchronous self timed write circuitry.
Three synchronous Chip Enables (CE
asynchronous Output Enable (OE) provide for easy bank
selection and output tri-state control. To avoid bus contention,
the output drivers are synchronously tri-stated during the data
portion of a write sequence. For best practice recommendations,
refer to the Cypress application note
Guidelines”.
X
133 MHz
) and a Write Enable (WE) input. All writes are conducted
305
120
6.5
CY7C1473BV33, CY7C1475BV33
San Jose
SRAM with NoBL™ Architecture
,
CA 95134-1709
117 MHz
275
120
8.5
CY7C1471BV33
AN1064
1
, CE
Revised April 6, 2010
2
, CE
“SRAM System
408-943-2600
Unit
mA
mA
ns
3
) and an
[+] Feedback

Related parts for CY7C1471BV33-117AXC

CY7C1471BV33-117AXC Summary of contents

Page 1

... SRAMs designed specifically to support unlimited true back-to-back read or write operations without the insertion of wait states. The CY7C1471BV33, CY7C1473BV33, and CY7C1475BV33 are equipped with the advanced No Bus Latency (NoBL) logic. NoBL™ is required to enable consecutive read or write operations with data being transferred on every clock cycle ...

Page 2

... Logic Block Diagram – CY7C1471BV33 (2M x 36) ADDRESS A0, A1, A REGISTER MODE CE CLK C CEN WRITE ADDRESS ADV/ READ LOGIC CE1 CE2 CE3 SLEEP ZZ CONTROL Logic Block Diagram – CY7C1473BV33 (4M x 18) ADDRESS A0, A1, A REGISTER MODE CE CLK WRITE ADDRESS ADV/ READ LOGIC CE1 CE2 CE3 ...

Page 3

... CLK C CEN WRITE ADDRESS REGISTER 1 ADV/ AND DATA COHERENCY READ LOGIC CE1 CE2 CE3 ZZ Sleep Control Document Number: 001-15029 Rev. *D CY7C1473BV33, CY7C1475BV33 A1 A1 A0' BURST D0 Q0 LOGIC ADV/LD C WRITE ADDRESS REGISTER 2 MEMORY WRITE ARRAY DRIVERS WRITE REGISTRY CONTROL LOGIC INPUT REGISTER 1 CY7C1471BV33 ...

Page 4

... Pin Configuration DQP DDQ BYTE DDQ DDQ BYTE DDQ DQP 30 D Document Number: 001-15029 Rev. *D CY7C1473BV33, CY7C1475BV33 Figure 1. 100-Pin TQFP Pinout CY7C1471BV33 CY7C1471BV33 80 DQP DDQ BYTE DDQ DDQ BYTE DDQ DQP A Page [+] Feedback ...

Page 5

... Pin Configuration (continued DDQ DDQ BYTE DDQ DQP DDQ Document Number: 001-15029 Rev. *D CY7C1473BV33, CY7C1475BV33 Figure 2. 100-Pin TQFP Pinout CY7C1473BV33 CY7C1471BV33 DDQ DQP DDQ BYTE DDQ DDQ Page [+] Feedback ...

Page 6

... D D DDQ DDQ DDQ N DQP DDQ P NC/144M MODE NC/576M NC/1G A CE2 DDQ DDQ DDQ DDQ DDQ DDQ DDQ DDQ DDQ N DQP DDQ P NC/144M MODE A A Document Number: 001-15029 Rev. *D CY7C1473BV33, CY7C1475BV33 CY7C1471BV33 ( CEN CLK TDI A1 TDO TCK TMS CY7C1473BV33 ( ...

Page 7

... DD DDQ V CEN DDQ DDQ DDQ MODE TDI CY7C1471BV33 DQb DQb 3 BWS BWS DQb DQb b f BWS BWS DQb DQb DQb DQb DQPf DQPb DDQ DDQ V DQf V DQf DQf DQf DDQ DDQ V V DQf SS SS DQf V V DDQ DQf DQf DDQ DQa ...

Page 8

... CE to select or deselect the device and CE to select or deselect the device and CE to select or deselect the device and DQP are placed in a tri-state condition.The outputs are automatically controlled by BW correspondingly left floating selects interleaved burst sequence. DD CY7C1471BV33 . During s Page [+] Feedback ...

Page 9

... No Connects. Not internally connected to the die. 144M, 288M, 576M, and 1G are address expansion pins and are not internally connected to the die. Functional Overview The CY7C1471BV33, CY7C1473BV33, and CY7C1475BV33 are synchronous flow through burst SRAMs designed specifically to eliminate wait states during write-read transitions. ...

Page 10

... X the data portion of a write cycle, regardless of the state of OE. Burst Write Accesses The CY7C1471BV33, CY7C1473BV33, and CY7C1475BV33 have an on-chip burst counter that enables the user to supply a single address and conduct up to four write operations without reasserting the address inputs. ADV/LD must be driven LOW to ...

Page 11

... The truth table for CY7C1471BV33, CY7C1473BV33, and CY7C1475BV33 follows. Truth Table Address Operation Used Deselect Cycle None Deselect Cycle None Deselect Cycle None Continue Deselect Cycle None Read Cycle External (Begin Burst) Read Cycle Next (Continue Burst) NOP/Dummy Read External (Begin Burst) ...

Page 12

... The read/write truth table for CY7C1471BV33 follows. Truth Table for Read/Write Function Read Write No bytes written Write Byte A – (DQ and DQP ) A A Write Byte B – (DQ and DQP ) B B Write Byte C – (DQ and DQP ) C C Write Byte D – (DQ and DQP ) D D Write All Bytes The read/write truth table for CY7C1473BV33 follows ...

Page 13

... IEEE 1149.1 Serial Boundary Scan (JTAG) The CY7C1471BV33, CY7C1473BV33, and CY7C1475BV33 incorporate a serial boundary scan test access port (TAP). This port operates in accordance with IEEE Standard 1149.1-1990 but does not have the set of functions required for full 1149.1 compliance. These functions from the IEEE specification are excluded because their inclusion places an added delay in the critical speed path of the SRAM ...

Page 14

... TDI and TDO balls. The advantage of the BYPASS instruction is that it shortens the boundary scan path when multiple devices are connected together on a board. Reserved These instructions are not implemented but are reserved for future use. Do not use these instructions. CY7C1471BV33 Page [+] Feedback ...

Page 15

... TAP Controller State Diagram TEST-LOGIC 1 RESET 0 1 RUN-TEST/ 0 IDLE Document Number: 001-15029 Rev. *D CY7C1473BV33, CY7C1475BV33 1 SELECT DR-SCA CAPTURE-DR CAPTURE-IR 0 SHIFT- EXIT1-DR 0 PAUSE- EXIT2-DR 1 UPDATE-DR UPDATE- CY7C1471BV33 1 SELECT IR-SCAN 0 0 SHIFT- EXIT1-IR 0 PAUSE- EXIT2- Page [+] Feedback ...

Page 16

... TAP Controller Block Diagram Selection TDI Circuitry TCK TM S Document Number: 001-15029 Rev. *D CY7C1473BV33, CY7C1475BV33 0 Bypass Register Selection Instruction Register Circuitry Identification Register Boundary Scan Register TAP CONTROLLER CY7C1471BV33 TDO Page [+] Feedback ...

Page 17

... OL DDQ 2.5V OL DDQ I = 100 µ 3.3V OL DDQ V = 2.5V DDQ V = 3.3V DDQ V = 2.5V DDQ V = 3.3V DDQ V = 2.5V DDQ GND < V < DDQ CY7C1471BV33 to 2.5V SS 1.25V 50Ω 50Ω 20pF O Min Max Unit 2.4 V 2.0 V 2.9 V 2.1 V 0.4 V 0.4 V 0.2 V 0 ...

Page 18

... CS CH 11.Test conditions are specified using the load in TAP AC Test Conditions. t Document Number: 001-15029 Rev. *D CY7C1473BV33, CY7C1475BV33 Description Figure 3. TAP Timing TDIS t TDIH DON’ UNDEFINED / ns CY7C1471BV33 Min Max Unit MHz ...

Page 19

... Do Not Use: This instruction is reserved for future use. 111 Places the bypass register between TDI and TDO. This operation does not affect SRAM operations. CY7C1471BV33 Description Describes the version number Reserved for internal use Defines memory type and architecture Defines width and density ...

Page 20

... M10 58 A8 L10 59 B8 K11 60 A7 165-Ball ID Bit # 165-Ball L10 P6 28 K10 R6 29 J10 R8 30 H11 P3 31 G11 P4 32 F11 P8 33 E11 P9 34 D11 P10 35 C11 R9 36 A11 R10 37 A9 R11 38 B9 M10 39 A10 CY7C1471BV33 Bit # 165-Ball Bit # 165-Ball ID 40 B10 ...

Page 21

... W6 71 J11 V5 72 J10 U5 73 H11 U6 74 H10 W7 75 G11 V7 76 G10 U7 77 F11 V8 78 F10 V9 79 E10 W11 80 E11 W10 81 D11 V11 82 D10 V10 83 C11 U11 84 C10 CY7C1471BV33 Bit # 209-Ball ID 85 B11 86 B10 87 A11 88 A10 100 B3 101 C3 102 C4 103 C8 104 ...

Page 22

... 0. inputs static /2). Undershoot: V (AC) > –2V (pulse width less than t CYC IL (min.) within 200 ms. During this time V < V and CY7C1471BV33 + 0.5V DD Ambient DDQ Temperature 0°C to +70°C 3.3V–5%/+10% 2.5V – –40°C to +85°C Min Max 3.135 3.6 3 ...

Page 23

... Figure 4. AC Test Loads and Waveforms R = 317 3.3V V OUTPUT DDQ GND 351 INCLUDING JIG AND (b) SCOPE R = 1667 2.5V V DDQ OUTPUT GND 1538 INCLUDING JIG AND (b) SCOPE CY7C1471BV33 165 FBGA 209 BGA Package Package 165 FBGA 209 FBGA Max Max 16.3 15 ...

Page 24

... V AC Test Loads and Waveforms is less than t and t is less than t to eliminate bus contention between SRAMs when sharing the same data OELZ CHZ CLZ CY7C1471BV33 = 3.3V and is DDQ on page 23 unless otherwise noted. 133 MHz 117 MHz Min Max Min ...

Page 25

... CDV t DOH t OEV t CLZ D(A2+1) Q(A3) Q(A4) t OEHZ t OELZ READ READ BURST Q(A3) Q(A4) READ Q(A4+1) DON’T CARE UNDEFINED is LOW. When CE is HIGH HIGH CY7C1471BV33 CHZ Q(A4+1) D(A5) Q(A6) D(A7) t DOH W RITE READ W RITE DESELECT D(A5) Q(A6) D(A7) is LOW HIGH. ...

Page 26

... The IGNORE CLOCK EDGE or STALL cycle (Clock 3) illustrates CEN being used to create a pause. A write is not performed during this cycle. Document Number: 001-15029 Rev. *D CY7C1473BV33, CY7C1475BV33 [20, 21, 23 Q(A2) Q(A3) STALL READ WRITE STALL Q(A3) D(A4) DON’T CARE UNDEFINED CY7C1471BV33 CHZ D(A4) Q(A5) t DOH NOP READ DESELECT CONTINUE Q(A5) DESELECT Page [+] Feedback ...

Page 27

... Document Number: 001-15029 Rev. *D CY7C1473BV33, CY7C1475BV33 [24, 25] Figure 7. ZZ Mode Timing High-Z DON’T CARE The truth table for CY7C1471BV33, CY7C1473BV33, and CY7C1475BV33 follows. CY7C1471BV33 t ZZREC t RZZI DESELECT or READ Only [ Page [+] Feedback ...

Page 28

... To find the office closest to you, visit http://www.cypress.com/go/datasheet/offices. Speed Package Ordering Code (MHz) Diagram 133 CY7C1471BV33-133AXC 51-85050 100-pin Thin Quad Flat Pack ( 1.4 mm) Pb-Free CY7C1473BV33-133AXC Document Number: 001-15029 Rev. *D CY7C1473BV33, CY7C1475BV33 http://www.cypress.com/products or contact your local sales Part and Package Type CY7C1471BV33 Operating Range Commercial Page [+] Feedback ...

Page 29

... Package Diagrams Figure 8. 100-Pin Thin Plastic Quad Flatpack ( 1.4 mm) Document Number: 001-15029 Rev. *D CY7C1471BV33 CY7C1473BV33, CY7C1475BV33 51-85050 *C Page [+] Feedback ...

Page 30

... Package Diagrams (continued) Figure 9. 165-Ball FBGA ( 1.4 mm) Document Number: 001-15029 Rev. *D CY7C1471BV33 CY7C1473BV33, CY7C1475BV33 51-85165 *B Page [+] Feedback ...

Page 31

... Package Diagrams (continued) Figure 10. 209-Ball FBGA ( 1.76 mm) Document Number: 001-15029 Rev. *D CY7C1471BV33 CY7C1473BV33, CY7C1475BV33 51-85167 *A Page [+] Feedback ...

Page 32

... Corrected typo in the “NOP, STALL and DESELECT Cycles” waveform Converted from preliminary to final Added footnote 16 related to IDD NJY Removed inactive parts from Ordering Information table; Updated package diagrams. VKN Removed inactive part CY7C1471BV33-117AXC from the ordering information table. Revised April 6, 2010 CY7C1471BV33 Page [+] Feedback ...

Related keywords