CY7C199D-10ZXI Cypress Semiconductor Corp, CY7C199D-10ZXI Datasheet - Page 4

IC SRAM 256KBIT 10NS 28TSOP

CY7C199D-10ZXI

Manufacturer Part Number
CY7C199D-10ZXI
Description
IC SRAM 256KBIT 10NS 28TSOP
Manufacturer
Cypress Semiconductor Corp
Type
Asynchronousr
Datasheet

Specifications of CY7C199D-10ZXI

Memory Size
256K (32K x 8)
Package / Case
28-TSOP I
Format - Memory
RAM
Memory Type
SRAM - Asynchronous
Speed
10ns
Interface
Parallel
Voltage - Supply
4.5 V ~ 5.5 V
Operating Temperature
-40°C ~ 85°C
Access Time
10 ns
Supply Voltage (max)
5.5 V
Supply Voltage (min)
4.5 V
Maximum Operating Current
80 mA
Maximum Operating Temperature
+ 85 C
Minimum Operating Temperature
- 40 C
Mounting Style
SMD/SMT
Number Of Ports
1
Operating Supply Voltage
5 V
Rohs Compliant
YES
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
428-2013

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
CY7C199D-10ZXI
Manufacturer:
CYPRESS
Quantity:
500
Part Number:
CY7C199D-10ZXI
Manufacturer:
CYPRESS/赛普拉斯
Quantity:
20 000
Part Number:
CY7C199D-10ZXIT
Manufacturer:
CYPRESS/赛普拉斯
Quantity:
20 000
Maximum Ratings
Exceeding the maximum ratings may impair the useful life of the
device. These user guidelines are not tested.
Storage temperature ................................ –65 C to +150 C
Ambient temperature with
power applied ........................................... –55 C to +125 C
Supply voltage on V
DC voltage applied to outputs
in high Z State
Electrical Characteristics
Over the operating range
Document Number: 38-05471 Rev. *H
Note
V
V
V
V
I
I
I
I
I
IX
OZ
CC
SB1
SB2
1. V
OH
OL
IH
IL
Parameter
IL(min)
= –2.0 V and V
[1]
Output HIGH voltage
Output LOW voltage
Input HIGH voltage
Input LOW voltage
Input leakage current
Output leakage current
V
Automatic CE
power-down current— TTL
Inputs
Automatic CE
power-down current— CMOS
Inputs
................................. –0.5 V to V
CC
CC
IH(max)
operating supply current V
to relative GND
= V
Description
CC
+ 1 V for pulse durations of less than 5 ns.
[1]
[1]
[1]
....–0.5 V to +6.0 V
I
I
GND < V
GND < V
I
f = f
V
V
V
V
OH
OL
OUT
CC
CC
CC
IN
CC
IN
= 8.0 mA
max
= –4.0 mA
> V
> V
+ 0.5 V
= V
= V
= V
= 0 mA,
IH
CC
= 1/t
CC(max)
CC(max)
CC(max)
I
O
< V
or V
– 0.3 V or V
< V
RC
CC
Test Conditions
IN
CC
,
, CE > V
, CE > V
< V
, output disabled
DC input voltage
Output current into outputs (LOW) .............................. 20 mA
Static discharge voltage......................................... > 2,001 V
(per MIL-STD-883, method 3015)
Latch-up current .................................................... > 140 mA
Operating Range
IL
, f = f
IN
Industrial
IH
CC
Range
< 0.3 V, f = 0
,
max
– 0.3 V,
100 MHz
83 MHz
66 MHz
40 MHz
[1]
–40 C to +85 C 5 V  0.5 V
.............................. –0.5 V to V
Temperature
Ambient
–0.5
Min
2.4
2.2
–1
–1
CY7C199D-10
V
V
CC
CC
Max
0.4
0.8
+1
+1
80
72
58
37
10
3
CY7C199D
+ 0.5
CC
Page 4 of 15
+ 0.5 V
Speed
10 ns
Unit
mA
mA
mA
mA
mA
mA
µA
µA
V
V
V
V
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