STFW69N65M5 STMicroelectronics, STFW69N65M5 Datasheet

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STFW69N65M5

Manufacturer Part Number
STFW69N65M5
Description
MOSFET N-Ch 650V 0.037 Ohm 58A MDMesh V MOS
Manufacturer
STMicroelectronics
Datasheet

Specifications of STFW69N65M5

Product Category
MOSFET
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
650 V
Continuous Drain Current
58 A
Resistance Drain-source Rds (on)
0.045 Ohms
Mounting Style
Through Hole
Package / Case
TO-3PF
Power Dissipation
70 W

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Features
Applications
Description
These devices are N-channel MDmesh™ V
Power MOSFETs based on an innovative
proprietary vertical process technology, which is
combined with STMicroelectronics’ well-known
PowerMESH™ horizontal layout structure. The
resulting product has extremely low on-
resistance, which is unmatched among silicon-
based Power MOSFETs, making it especially
suitable for applications which require superior
power density and outstanding efficiency.
Table 1.
September 2012
This is information on a product in full production.
STFW69N65M5
N-channel 650 V, 0.037 Ω typ., 58 A MDmesh™ V Power MOSFET
STW69N65M5
Order codes
Worldwide best R
Higher V
Excellent switching performance
100% avalanche tested
Switching applications
STFW69N65M5
STW69N65M5
Order codes
DSS
Device summary
rating and high dv/dt capability
V
DSS
710 V
DS(on)
@ T
Jmax
* area
R
< 0.045 Ω
DS(on)
69N65M5
Marking
max
Doc ID 022906 Rev 2
58 A
I
D
in TO-3PF and TO-247 packages
Figure 1.
Package
TO-3PF
TO-247
TO-3PF
1 1 1
Internal schematic diagram
STFW69N65M5
1
STW69N65M5
2
Datasheet
3
Packaging
production data
TO-247
Tube
www.st.com
1
2
1/16
3
16

Related parts for STFW69N65M5

STFW69N65M5 Summary of contents

Page 1

... STW69N65M5 September 2012 This is information on a product in full production. in TO-3PF and TO-247 packages R max I DS(on) D < 0.045 Ω Figure 1. Marking 69N65M5 Doc ID 022906 Rev 2 STFW69N65M5 STW69N65M5 − Datasheet production data TO-247 TO-3PF Internal schematic diagram Package Packaging TO-3PF ...

Page 2

... Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 2/ Doc ID 022906 Rev 2 STFW69N65M5, STW69N65M5 ...

Page 3

... STFW69N65M5, STW69N65M5 1 Electrical ratings Table 2. Absolute maximum ratings Symbol V Gate-source voltage GS I Drain current (continuous Drain current (continuous (2) I Drain current (pulsed Total dissipation at T TOT (3) dv/dt Peak diode recovery voltage slope Insulation withstand voltage (RMS) from all ...

Page 4

... MHz 520 MHz open drain V = 520 (see Figure 18) DSS DSS Doc ID 022906 Rev 2 STFW69N65M5, STW69N65M5 Min. Typ 650 =125 ° 250 µ 0.037 Min. Typ. 6420 - 170 11 - 536 = 0 GS ...

Page 5

... STFW69N65M5, STW69N65M5 Table 7. Switching times Symbol t Voltage delay time d(v) t Voltage rise time r(v) t Current fall time f(i) t Crossing time c(off) Table 8. Source drain diode Symbol I Source-drain current SD (1) I Source-drain current (pulsed) SDM (2) V Forward on voltage SD t Reverse recovery time rr Q Reverse recovery charge ...

Page 6

... Electrical characteristics 2.1 Electrical characteristics (curves) Figure 2. Safe operating area for TO-3PF Figure 4. Safe operating area for TO-247 Figure 6. Output characteristics 6/16 STFW69N65M5, STW69N65M5 Figure 3. Thermal impedance for TO-3PF K δ=0.5 0.2 0 0.01 Single pulse - Figure 5. Thermal impedance for TO-247 Figure 7. Transfer characteristics ...

Page 7

... STFW69N65M5, STW69N65M5 Figure 8. Gate charge vs gate-source voltage Figure 9. Figure 10. Capacitance variations Figure 12. Normalized gate threshold voltage vs temperature V GS(th) (norm) 1.10 1.00 0.90 0.80 0.70 -50 - Figure 11. Output capacitance stored energy Figure 13. Normalized on-resistance vs AM05459v2 R DS(on) (norm) I =250 µ 1.9 1.7 1.5 1.3 1.1 0.9 0.7 0 (°C) 100 J Doc ID 022906 Rev 2 Electrical characteristics ...

Page 8

... J 0.4 0 Figure 16. Switching losses vs gate (1) resistance 1. Eon including reverse recovery of a SiC diode 8/16 Figure 15. Normalized B AM05461v1 V DS (norm) 1.08 1.06 1.04 1.02 T =25°C J 1.00 0.98 0.96 0.94 0. (A) - Doc ID 022906 Rev 2 STFW69N65M5, STW69N65M5 vs temperature VDSS I = 1mA D - (° 100 J AM10399v1 ...

Page 9

... STFW69N65M5, STW69N65M5 3 Test circuits Figure 17. Switching times test circuit for resistive load Figure 19. Test circuit for inductive load switching and diode recovery times Figure 21. Unclamped inductive waveform Figure 18. Gate charge test circuit Figure 20. Unclamped inductive load test circuit Figure 22. Switching time waveform ...

Page 10

... Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ® ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ® ECOPACK trademark. 10/16 STFW69N65M5, STW69N65M5 Doc ID 022906 Rev 2 ® ...

Page 11

... STFW69N65M5, STW69N65M5 Table 9. TO-3PF mechanical data Dim Dia mm Min. Typ. 5.30 2.80 3.10 1.80 0.80 0.65 1.80 10.30 5.45 15.30 9.80 10 22.80 26.30 43.20 4.30 24.30 14.60 1.80 3.80 3.40 Doc ID 022906 Rev 2 Package mechanical data Max. 5.70 3.20 3.50 2.20 1.10 0.95 2.20 11.50 15.70 10.20 23.20 26.70 44.40 4.70 24.70 15 2.20 4.20 3.80 11/16 ...

Page 12

... Package mechanical data Figure 23. TO-3PF drawing 12/ Dia L2 L6 F2(3x Doc ID 022906 Rev 2 STFW69N65M5, STW69N65M5 F(3x 7627132_C ...

Page 13

... STFW69N65M5, STW69N65M5 Table 10. TO-247 mechanical data Dim ∅P ∅R S mm. Min. Typ. 4.85 2.20 1.0 2.0 3.0 0.40 19.85 15.45 5.30 5.45 14.20 3.70 18.50 3.55 4.50 5.30 5.50 Doc ID 022906 Rev 2 Package mechanical data Max. 5.15 2.60 1.40 2.40 3.40 0.80 20.15 15.75 5.60 14.80 4.30 3.65 5.50 5.70 13/16 ...

Page 14

... Package mechanical data Figure 24. TO-247 drawing 14/16 STFW69N65M5, STW69N65M5 Doc ID 022906 Rev 2 0075325_G ...

Page 15

... STFW69N65M5, STW69N65M5 5 Revision history Table 11. Document revision history Date 27-Feb-2012 28-Sep-2012 Revision 1 First release. – Modified: note 3 of Table 6, 7 and 8 2 – Curves inserted – Minor text changes Doc ID 022906 Rev 2 Revision history Changes Table 2, values in Table 4, typ. values in 15/16 ...

Page 16

... Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America 16/16 Please Read Carefully: © 2012 STMicroelectronics - All rights reserved STMicroelectronics group of companies www.st.com Doc ID 022906 Rev 2 STFW69N65M5, STW69N65M5 ...

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