STP75N75F4 STMicroelectronics, STP75N75F4 Datasheet
STP75N75F4
Specifications of STP75N75F4
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STP75N75F4 Summary of contents
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... July 2012 This is information on a product in full production. Power MOSFET in a TO-220 package max I DS(on) D < 0.011 Ω Figure 1. Marking 75N75F4 Doc ID 023484 Rev 1 STP75N75F4 Datasheet — production data TAB TO-220 Internal schematic diagram Package Packaging TO-220 Tube 1/12 www.st.com ...
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... Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2/ Doc ID 023484 Rev 1 STP75N75F4 ...
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... STP75N75F4 1 Electrical ratings Table 2. Absolute maximum ratings Symbol V Drain-source voltage DS V Gate-source voltage GS I Drain current (continuous Drain current (continuous (1) I Drain current (pulsed Total dissipation at T TOT Derating factor (2) E Single pulse avalanche energy AS T Storage temperature ...
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... MHz 37 (see Figure 14) Parameter Test conditions 4.7 Ω (see Figure 13) Doc ID 023484 Rev 1 STP75N75F4 Min. Typ =125 ° 250 µ 0.0092 D Min. Typ. 5015 - 382 218 ...
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... STP75N75F4 Table 7. Source drain diode Symbol I Source-drain current SD (1) I Source-drain current (pulsed) SDM (2) V Forward on voltage SD t Reverse recovery time rr Q Reverse recovery charge rr I Reverse recovery current RRM 1. Pulse width limited by safe operating area. 2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5% ...
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... Electrical characteristics 2.1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 4. Output characteristics Figure 6. Normalized BV DSS 6/12 Figure 3. Figure 5. vs temperature Figure 7. Doc ID 023484 Rev 1 STP75N75F4 Thermal impedance Transfer characteristics Static drain-source on-resistance ...
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... STP75N75F4 Figure 8. Gate charge vs gate-source voltage Figure 9. Figure 10. Normalized on-resistance vs temperature Figure 12. Source-drain diode forward characteristics Capacitance variations Figure 11. Normalized gate threshold voltage vs temperature Doc ID 023484 Rev 1 Electrical characteristics 7/12 ...
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... Figure 16. Unclamped inductive load test 3.3 1000 μF μ AM01470v1 Figure 18. Switching time waveform V (BR)DSS 10% 0 AM01472v1 Doc ID 023484 Rev 1 STP75N75F4 12V 47kΩ 100nF I =CONST G 100Ω GMAX 2200 μF 2.7kΩ 47kΩ 1kΩ circuit 2200 3.3 μ ...
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... STP75N75F4 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ® ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK trademark. Table 8. TO-220 type A mechanical data Dim. ...
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... Package mechanical data Figure 19. TO-220 type A drawing 10/12 Doc ID 023484 Rev 1 STP75N75F4 0015988_typeA_Rev_S ...
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... STP75N75F4 5 Revision history Table 9. Document revision history Date 24-Jul-2012 Revision 1 First release. Doc ID 023484 Rev 1 Revision history Changes 11/12 ...
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... Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America 12/12 Please Read Carefully: © 2012 STMicroelectronics - All rights reserved STMicroelectronics group of companies www.st.com Doc ID 023484 Rev 1 STP75N75F4 ...