STW60NM50N STMicroelectronics, STW60NM50N Datasheet
STW60NM50N
Specifications of STW60NM50N
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STW60NM50N Summary of contents
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... This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. R DS(on max <0.043 Ω Figure 1. Marking 60NM50N Doc ID 023157 Rev 1 STW60NM50N in TO-247 package Datasheet — preliminary data TO-247 Internal schematic diagram Package Packaging TO-247 Tube 1/10 www ...
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... Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 2/ Doc ID 023157 Rev 1 STW60NM50N ...
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... STW60NM50N 1 Electrical ratings Table 2. Absolute maximum ratings Symbol V Gate- source voltage GS I Drain current (continuous Drain current (continuous (1) I Drain current (pulsed Total dissipation at T TOT (2) dv/dt Peak diode recovery voltage slope T Storage temperature stg T Max. operating junction temperature j 1 ...
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... Figure 3) f=1 MHz gate DC bias=0 Test signal level = 20 mV open drain DS Parameter Test conditions V =300 4.7 Ω (see Figure 2) Doc ID 023157 Rev 1 STW60NM50N Min. Typ. 500 = 500 V = 500 125 ° ± 250 µ 0.035 0.043 Min. ...
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... STW60NM50N Table 8. Source drain diode Symbol I Source-drain current SD (1) I Source-drain current (pulsed) SDM (2) V Forward on voltage SD t Reverse recovery time rr Q Reverse recovery charge rr I Reverse recovery current RRM t Reverse recovery time rr Q Reverse recovery charge rr I Reverse recovery current RRM 1. Pulse width limited by safe operating area. 2. Pulsed: Pulse duration = 300 µ ...
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... Switching times test circuit for resistive load Figure 4. Test circuit for inductive load switching and diode recovery times Figure 6. Unclamped inductive waveform 6/10 Figure 3. Gate charge test circuit Figure 5. Unclamped Inductive load test circuit Figure 7. Switching time waveform Doc ID 023157 Rev 1 STW60NM50N ...
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... STW60NM50N 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ® ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ® ECOPACK trademark. Table 9. TO-247 mechanical data Dim. ...
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... Package mechanical data Figure 8. TO-247 drawing 8/10 Doc ID 023157 Rev 1 STW60NM50N 0075325_G ...
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... STW60NM50N 5 Revision history Table 10. Document revision history Date 26-Apr-2012 Revision 1 First release. Doc ID 023157 Rev 1 Revision history Changes 9/10 ...
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... Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America 10/10 Please Read Carefully: © 2012 STMicroelectronics - All rights reserved STMicroelectronics group of companies www.st.com Doc ID 023157 Rev 1 STW60NM50N ...