FCH041N60E Fairchild Semiconductor, FCH041N60E Datasheet

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FCH041N60E

Manufacturer Part Number
FCH041N60E
Description
MOSFET N-Channel MOSFET
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of FCH041N60E

Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
600 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
77 A
Resistance Drain-source Rds (on)
41 mOhms
Configuration
Single
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Package / Case
TO-247-3
Fall Time
85 ns
Forward Transconductance Gfs (max / Min)
71 S
Gate Charge Qg
285 nC
Minimum Operating Temperature
- 50 C
Power Dissipation
592 W
Rise Time
50 ns
Typical Turn-off Delay Time
320 ns

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©2012 Fairchild Semiconductor Corporation
FCH041N60E Rev. C0
MOSFET Maximum Ratings
Thermal Characteristics
V
V
I
I
E
I
E
dv/dt
P
T
T
R
R
D
DM
AR
FCH041N60E
N-Channel MOSFET
Features
• Max. R
• Ultra Low Gate Charge (Typ. Q
• Low Effective Output Capacitance (Typ. C
• 100% Avalanche Tested
• RoHS Compliant
J
L
DSS
GSS
AS
AR
D
θJC
θJA
, T
Symbol
Symbol
STG
DS(on)
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
MOSFET dv/dt
Power Dissipation
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
= 41mΩ
G
D
S
g
= 285nC)
T
oss
C
= 25
.eff = 735pF)
TO-247
Parameter
Parameter
-DC
-AC
-Continuous (T
-Continuous (T
- Pulsed
(T
- Derate above 25
C
o
C unless otherwise noted
= 25
o
C)
C
C
= 25
= 100
1
o
C
Description
The SuperFET
high voltage MOSFET family that is utilizing an advanced charge
balance mechanism for outstanding low on-resistance and lower
gate charge performance.
This advanced technology has been tailored to minimize
conduction loss, provide superior switching performance, and
withstand extreme dv/dt rate and higher avalanche energy.
Consequently, SuperFET
power conversion in switching mode operation for system
miniaturization and higher efficiency.
o
C)
o
C)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
(f>1Hz)
®
II is, Fairchild’s proprietary, new generation of
G
®
II is very suitable for various AC/DC
SuperFET
S
D
-55 to +150
Ratings
Ratings
2025
48.7
5.92
4.74
600
±20
±30
231
100
592
300
0.21
77
15
20
40
October 2012
www.fairchildsemi.com
®
II
Units
W/
Units
o
V/ns
V/ns
mJ
mJ
C/W
o
o
W
V
V
A
A
A
C
C
o
C

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FCH041N60E Summary of contents

Page 1

... R Thermal Resistance, Junction to Case θJC R Thermal Resistance, Junction to Ambient θJA ©2012 Fairchild Semiconductor Corporation FCH041N60E Rev. C0 Description The SuperFET high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. .eff = 735pF) oss ...

Page 2

... Repetitive Rating: Pulse width limited by maximum junction temperature 15A 25Ω, Starting T = 25° ≤ 39A, di/dt ≤ 200A/μs, V ≤ 380V, Starting Essentially Independent of Operating Temperature Typical Characteristics FCH041N60E Rev. C0 Package Reel Size TO-247 - unless otherwise noted C Test Conditions I = 10mA 0V, T ...

Page 3

... 1MHz 10 C iss = shorted) C oss = rss = 0 Drain-Source Voltage [V] DS FCH041N60E Rev. C0 Figure 2. Transfer Characteristics 300 100 10 *Notes: μ 1. 250 s Pulse Test 0 Figure 4. Body Diode Forward Voltage ...

Page 4

... J 3. Single Pulse 0.1 0 Drain-Source Voltage [V] DS Figure 11. Eoss vs. Drain to Source Voltage 100 200 300 V , Drain to Source Voltage [V] DS FCH041N60E Rev. C0 (Continued) Figure 8. On-Resistance Variation 3.0 2.5 2.0 1.5 1.0 *Notes: 0 10mA D 0.0 -80 80 120 160 o C] Figure 10. Maximum Drain Current 80 μ ...

Page 5

... Typical Performance Characteristics 0.5 0.5 0.1 0.2 0.1 0.05 0.01 0.02 0.01 Single pulse 1E FCH041N60E Rev. C0 (Continued) Figure 12. Transient Thermal Response Curve - Rectangular Pulse Duration [sec *Notes (t) = 0.21 C/W Max. θ Duty Factor (t) θ www ...

Page 6

... FCH041N60E Rev. C0 Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms 6 www.fairchildsemi.com ...

Page 7

... Driver ) ( Driver ) DUT ) ( DUT ) DUT ) ( DUT ) FCH041N60E Rev. C0 Peak Diode Recovery dv/dt Test Circuit & Waveforms + + DUT DUT Driver Driver Same Type Same Type as DUT as DUT GS GS • dv/dt controlled by R • ...

Page 8

... Mechanical Dimensions FCH041N60E Rev. C0 TO-247-3L 8 Dimensions in Millimeters www.fairchildsemi.com ...

Page 9

... PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FCH041N60E Rev. C0 PowerTrench ® PowerXS™ SM Programmable Active Droop™ ® QFET QS™ Quiet Series™ RapidConfigure™ ™ ...

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