SIA416DJ-T1-GE3 Vishay/Siliconix, SIA416DJ-T1-GE3 Datasheet

SIA416DJ-T1-GE3

Manufacturer Part Number

SIA416DJ-T1-GE3

Description

MOSFET 100V 83mOhm@10V 11.3A N-Ch MV T-FET

Manufacturer

Vishay/Siliconix

Datasheet

1.SIA416DJ-T1-GE3.pdf (5 pages)

Specifications of SIA416DJ-T1-GE3

Product Category

MOSFET

Rohs

yes

Transistor Polarity

N-Channel

Drain-source Breakdown Voltage

100 V

Gate-source Breakdown Voltage

3 V

Continuous Drain Current

11.3 A

Resistance Drain-source Rds (on)

83 mOhms at 10 V

Configuration

Single

Mounting Style

SMD/SMT

Package / Case

PowerPAK SC-70-6L Single

Power Dissipation

19 W

Tradename

TrenchFET Power MOSFET

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

SIA416DJ-T1-GE3

Manufacturer:

VISHAY

Quantity:

15 000

Current page: 1 of 5
Download datasheet (95Kb)

Notes:

a. Based on T

b. Surface mounted on 1" x 1" FR4 board.

c. t = 5 s.

d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed copper

e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.

f. Maximum under steady state conditions is 80 °C/W.

Document Number: 63649

S12-2438-Rev. B, 15-Oct-12

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

PRODUCT SUMMARY

ABSOLUTE MAXIMUM RATINGS (T

Parameter

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current (T

Pulsed Drain Current (t = 300 µs)

Continuous Source-Drain Diode Current

Single Pulse Avalanche Current

Single Pulse Avalanche Energy

Maximum Power Dissipation

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

THERMAL RESISTANCE RATINGS

Parameter

Maximum Junction-to-Ambient

Maximum Junction-to-Case (Drain)

(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not

required to ensure adequate bottom side solder interconnection.

100

(V)

Ordering Information:

SiA416DJ-T1-GE3 (Lead (Pb)-free and Halogen-free)

2.05 mm

= 25 °C.

0.130 at V

0.083 at V

PowerPAK SC-70-6L-Single

DS(on)

() Max.

= 4.5 V

= 10 V

= 150 °C)

b, f

2.05 mm

Bottom View

N-Channel 100 V (D-S) MOSFET

For technical questions, contact:

11.3

(A)

This document is subject to change without notice.

d, e

= 25 °C, unless otherwise noted)

Steady State

3.5 nC

L =0.1 mH

(Typ.)

t  5 s

= 25 °C

= 70 °C

= 25 °C

= 70 °C

= 25 °C

= 70 °C

= 25 °C

= 70 °C

pmostechsupport@vishay.com

FEATURES

APPLICATIONS

• TrenchFET

• 100 % R

• Material categorization:

• DC/DC Converters

• Full-Bridge Converters

• For Power Bricks and POL Power

Part # code

Symbol

For definitions of compliance please see

www.vishay.com/doc?99912

, T

thJC

thJA

stg

Marking Code

A R X

X X X

and UIS Tested

Power MOSFET

Typical

5.3

Lot Traceability

and Date code

- 55 to 150

4.8

3.9

2.9

3.5

2.2

Limit

± 20

11.3

0.45

100

260

b, c

Maximum

6.5

Vishay Siliconix

www.vishay.com/doc?91000

N-Channel MOSFET

SiA416DJ

www.vishay.com

°C/W

Unit

°C

Related parts for SIA416DJ-T1-GE3

SIA416DJ-T1-GE3 Summary of contents

Page 1

... 2. 2. Bottom View Ordering Information: SiA416DJ-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current (t = 300 µs) Continuous Source-Drain Diode Current Single Pulse Avalanche Current Single Pulse Avalanche Energy ...

Page 2

... SiA416DJ Vishay Siliconix SPECIFICATIONS ( °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance ...

Page 3

... V 200 100 1 3 1.6 1.4 1.2 1.0 0.8 0 On-Resistance vs. Junction Temperature pmostechsupport@vishay.com This document is subject to change without notice. SiA416DJ Vishay Siliconix = 25 ° 125 ° ° Gate-to-Source Voltage (V) GS Transfer Characteristics C iss C oss C rss ...

Page 4

... SiA416DJ Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 100 10 = 150 ° 0.1 0.0 0.2 0.4 0.6 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 2.7 2.5 2.3 2 250 μA D 1.9 1 100 T - Temperature (°C) J Threshold Voltage 100 10 0.1 0.01 www.vishay.com For technical questions, contact: 4 THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT ...

Page 5

... Case Temperature (°C) C Current Derating 100 125 T - Case Temperature (°C) C Power, Junction-to-Case = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper pmostechsupport@vishay.com This document is subject to change without notice. SiA416DJ Vishay Siliconix 150 150 www.vishay.com www.vishay.com/doc?91000 5 ...

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