3LP01S-K-TL-E ON Semiconductor, 3LP01S-K-TL-E Datasheet

3LP01S-K-TL-E

Manufacturer Part Number

3LP01S-K-TL-E

Description

MOSFET

Manufacturer

ON Semiconductor

Datasheet

1.3LP01S-K-TL-E.pdf (7 pages)

Specifications of 3LP01S-K-TL-E

Transistor Polarity

P-Channel

Drain-source Breakdown Voltage

- 30 V

Continuous Drain Current

- 0.1 A

Resistance Drain-source Rds (on)

10.4 Ohms

Mounting Style

SMD/SMT

Package / Case

SC-75

Power Dissipation

0.15 W

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

3LP01S-K-TL-E

Manufacturer:

SANYO

Quantity:

83 000

Current page: 1 of 7
Download datasheet (518Kb)

Ordering number : EN6681B

3LP01S

Features

Speciﬁ cations

Absolute Maximum Ratings at Ta=25°C

Package Dimensions

unit : mm (typ)

7013A-013

This product is designed to “ESD immunity < 200V*”, so please take care when handling.

* Machine Model

Drain-to-Source Voltage

Gate-to-Source Voltage

Drain Current (DC)

Drain Current (Pulse)

Allowable Power Dissipation

Channel Temperature

Storage Temperature

•

Low ON-resistance

Ultrahigh-speed switching

2.5V drive

0.4

Parameter

1.6

0.8

0.1 MIN

0.4

1 : Gate

2 : Source

3 : Drain

SANYO : SMCP

3LP01S-TL-E

P-Channel Silicon MOSFET

General-Purpose Switching Device

Applications

V DSS

V GSS

I D

I DP

P D

Tch

Tstg

Symbol

http://semicon.sanyo.com/en/network

SANYO Semiconductors

PW≤10μs, duty cycle≤1%

3LP01S

62712 TKIM/41006PE MSIM TB-00002191/12201 TSIM TA-2005

Product & Package Information

• Package

• JEITA, JEDEC

• Minimum Packing Quantity : 3,000 pcs./reel

Packing Type: TL

Electrical Connection

Conditions

DATA SHEET

: SMCP

: SC-75, SOT-416

Marking

Ratings

--55 to +150

--0.1

--0.4

0.15

--30

±10

150

No.6681-1/7

Unit

°C

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