MCH6603-TL-H ON Semiconductor, MCH6603-TL-H Datasheet

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MCH6603-TL-H

Manufacturer Part Number
MCH6603-TL-H
Description
MOSFET
Manufacturer
ON Semiconductor
Datasheet

Specifications of MCH6603-TL-H

Transistor Polarity
P-Channel
Drain-source Breakdown Voltage
- 50 V
Continuous Drain Current
- 140 mA
Resistance Drain-source Rds (on)
23 mOhms
Mounting Style
SMD/SMT
Package / Case
MCPH-6
Power Dissipation
0.8 W
Ordering number : EN6446C
MCH6603
Features
Specifi cations
Absolute Maximum Ratings at Ta=25°C
Package Dimensions
unit : mm (typ)
7022A-006
This product is designed to “ESD immunity < 200V*”, so please take care when handling.
* Machine Model
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Low ON-resistance
Ultrahigh-speed switching
1.5V drive
Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting
Halogen free conplaiance
6
1
6
1
0.65
Parameter
2.0
5
2
5
2
4
3
3
4
0.3
0.15
1 : Source1
2 : Gate1
3 : Drain2
4 : Source2
5 : Gate2
6 : Drain1
SANYO : MCPH6
71112 TKIM/51506PE MSIM TB-00002290/O3105PE MSIM TB-00001861/N1999 TSIM TA-2458
0 t o 0.02
V DSS
V GSS
I D
I DP
P D
Tch
Tstg
Symbol
MCH6603-TL-H
P-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
http://semicon.sanyo.com/en/network
SANYO Semiconductors
PW≤10μs, duty cycle≤1%
When mounted on ceramic substrate (900mm
MCH6603
Conditions
Product & Package Information
• Package
• JEITA, JEDEC
• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type : TL
Electrical Connection
2
6
1
×0.8mm)1unit
TL
DATA SHEET
5
2
4
3
Ratings
: MCPH6
: SC-88, SC-70-6, SOT-363
--55 to +150
Marking
--0.14
--0.56
FC
--50
±10
150
0.8
No.6446-1/7
Unit
°C
°C
W
A
A
V
V

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MCH6603-TL-H Summary of contents

Page 1

... PW≤10μs, duty cycle≤ When mounted on ceramic substrate (900mm Tch Tstg Product & Package Information • Package • JEITA, JEDEC • Minimum Packing Quantity : 3,000 pcs./reel MCH6603-TL-H Packing Type : TL Electrical Connection http://semicon.sanyo.com/en/network DATA SHEET Ratings --50 ±10 --0.14 --0 ...

Page 2

... V OUT PW=10μs D.C.≤1% G P.G 50Ω S MCH6603 Ordering Information Device MCH6603-TL-H MCH6603 Symbol Conditions V (BR)DSS I D =--1mA =0V I DSS V DS =--50V =0V I GSS V GS =±8V = (off =--10V =--100μA | yfs | V DS =--10V =--40mA ...

Page 3

... Ta=75°C 25°C 2 --25° --0.01 --0.1 Drain Current (on --60 --40 -- Ambient Temperature °C MCH6603 --0.14 --0.12 --0.1 --0.08 --0.06 --0. --1.5V --0. --1.6 --1.8 --2.0 IT00090 100 Ta=25° --7 --8 --9 --10 --0.01 IT00092 100 --2. --0 ...

Page 4

... --0.14A --0 Operation in this area is limited (on Ta=25°C Single pulse ✕0.8mm) 1unit 2 Mounted on a ceramic board (900mm --0. --1.0 --10 Drain-to-Source Voltage MCH6603 1000 100 --1.0 --1.1 --1.2 --0.01 IT00098 --10 f=1MHz --10V --70mA ...

Page 5

... Taping Specifi cation MCH6603-TL-H MCH6603 No.6446-5/7 ...

Page 6

... Outline Drawing MCH6603-TL-H MCH6603 Land Pattern Example Mass (g) Unit 0.008 mm * For reference Unit: mm 0.4 0.65 0.65 No.6446-6/7 ...

Page 7

... Note on usage : Since the MCH6603 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. The products mentioned herein shall not be intended for use for any " ...

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