CPH6341-M-TL-E ON Semiconductor, CPH6341-M-TL-E Datasheet

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CPH6341-M-TL-E

Manufacturer Part Number
CPH6341-M-TL-E
Description
MOSFET
Manufacturer
ON Semiconductor
Datasheet

Specifications of CPH6341-M-TL-E

Transistor Polarity
P-Channel
Drain-source Breakdown Voltage
- 30 V
Continuous Drain Current
- 5 A
Resistance Drain-source Rds (on)
59 mOhms
Mounting Style
SMD/SMT
Package / Case
SC-74
Power Dissipation
1.6 W
Ordering number : ENA1084A
CPH6341
Features
Specifi cations
Absolute Maximum Ratings at Ta=25°C
Package Dimensions
unit : mm (typ)
7018A-003
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Low ON-resistance
High-speed switching
4V drive
Protection diode in
1
6
0.95
Parameter
2
2.9
5
4
3
0.4
1 : Drain
2 : Drain
3 : Gate
4 : Source
5 : Drain
6 : Drain
SANYO : CPH6
0.15
0.05
V DSS
V GSS
I D
I DP
P D
Tch
Tstg
Symbol
P-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
CPH6341-TL-E
http://semicon.sanyo.com/en/network
SANYO Semiconductors
PW≤10μs, duty cycle≤1%
When mounted on ceramic substrate (900mm
CPH6341
Conditions
Product & Package Information
• Package
• JEITA, JEDEC
• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type: TL
Electrical Connection
3
61312 TKIM/30508PE TIIM TC-00001220
TL
1, 2, 5, 6
2
×0.8mm)
4
DATA SHEET
: CPH6
: SC-74, SOT-26, SOT-457
Marking
Ratings
--55 to +150
--30
±20
--20
150
1.6
- -5
No. A1084-1/7
Unit
°C
°C
W
A
A
V
V

Related parts for CPH6341-M-TL-E

CPH6341-M-TL-E Summary of contents

Page 1

... PW≤10μs, duty cycle≤ When mounted on ceramic substrate (900mm Tch Tstg Product & Package Information • Package • JEITA, JEDEC • Minimum Packing Quantity : 3,000 pcs./reel CPH6341-TL-E Packing Type: TL Electrical Connection 3 http://semicon.sanyo.com/en/network DATA SHEET Ratings --30 ±20 ...

Page 2

... =5Ω D PW=10μs D.C.≤1% G CPH6341 P.G 50Ω S Ordering Information Device CPH6341-TL-E CPH6341 Symbol Conditions -1mA =0V V (BR)DSS -30V =0V I DSS I GSS V GS =±16V = -10V -1mA V GS (off -10V -3A | yfs | -3A -10V R DS (on ...

Page 3

... Drain Current Time -- --15V --10V 100 --0.1 --1.0 Drain Current CPH6341 -- --10V --5 --4 --3 --2 --1 0 --0.8 --0.9 --1.0 0 --0.5 IT13379 160 Ta=25°C 140 120 100 --12 --14 --16 --60 --40 ...

Page 4

... Total Gate Charge 2.0 When mounted on ceramic substrate ✕0.8mm) 2 (900mm 1.6 1.5 1.0 0 100 Ambient Temperature ° C CPH6341 --20A --1 Operation in this 3 2 area is limited (on). --0.1 7 Ta=25 °C 5 Single pulse 3 When mounted on ceramic substrate ...

Page 5

... Embossed Taping Specifi cation CPH6341-TL-E CPH6341 No. A1084-5/7 ...

Page 6

... Outline Drawing CPH6341-TL-E CPH6341 Land Pattern Example Mass (g) Unit 0.015 mm * For reference Unit: mm 0.6 0.95 0.95 No. A1084-6/7 ...

Page 7

... Note on usage : Since the CPH6341 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. The products mentioned herein shall not be intended for use for any " ...

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