SUP75P03-08-E3 Vishay/Siliconix, SUP75P03-08-E3 Datasheet
SUP75P03-08-E3
Specifications of SUP75P03-08-E3
Related parts for SUP75P03-08-E3
SUP75P03-08-E3 Summary of contents
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... P-Channel 30-V (D-S), 175_C MOSFET V (V) r (W) (BR)DSS DS(on) –30 0.008 TO-220AB DRAIN connected to TAB Top View SUP75P03-08 Parameter Gate-Source Voltage Continuous Drain Current Continuous Drain Current (T = 175_C) J Pulsed Drain Current Avalanche Current b Repetitive Avalanche Energy Power Dissipation Operating Junction and Storage Temperature Range ...
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SUP/SUB75P03-08 Vishay Siliconix _ Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance Reversen Transfer Capacitance c ...
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Output Characteristics 200 160 120 – Drain-to-Source Voltage (V) DS Transconductance 100 T = –55_C ...
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SUP/SUB75P03-08 Vishay Siliconix On-Resistance vs. Junction Temperature 1 1.5 1.2 0.9 0.6 –50 – – Junction Temperature (_C) J Maximum Avalanche and Drain Current vs. ...
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All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or ...